Head Line: Samsung Electronics Co., Ltd. granted US Patent for "Magnetic Memory Devices Including Magnetic Tunnel Junctions"

Press/Media: Press / Media

Period2023 Feb 21

Media coverage

1

Media coverage

  • TitleHead Line: Samsung Electronics Co., Ltd. granted US Patent for "Magnetic Memory Devices Including Magnetic Tunnel Junctions"
    Media name/outletImpact Financial News
    Country/TerritoryUnited Kingdom
    Date23/2/21
    PersonsChulwoo Kim
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