New Electronics Findings from Korea University Described (Capacitorless Two-transistor Dynamic Random-access Memory Cells Comprising Amorphous Indium-tin-gallium-zinc Oxide Thin-film Transistors for the Multiply-accumulate Operation)

Media coverage

• Title	New Electronics Findings from Korea University Described (Capacitorless Two-transistor Dynamic Random-access Memory Cells Comprising Amorphous Indium-tin-gallium-zinc Oxide Thin-film Transistors for the Multiply-accumulate Operation)
  Media name/outlet	South Korea Daily Report
  Country/Territory	United States
  Date	24/5/31
  Persons	Sangsig Kim