US Patent Issued to SAMSUNG ELECTRONICS on Feb. 13 for "Method of testing memory device, memory built-in self test (MBIST) circuit, and memory device for reducing test time" (South Korean Inventors)

    Press/Media: Press / Media

    Period2024 Feb 14

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    • TitleUS Patent Issued to SAMSUNG ELECTRONICS on Feb. 13 for "Method of testing memory device, memory built-in self test (MBIST) circuit, and memory device for reducing test time" (South Korean Inventors)
      Media name/outletUS Fed News
      Country/TerritoryUnited States
      Date24/2/14
      PersonsJae Hoon Lee
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