US Patent Issued to SAMSUNG ELECTRONICS on June 18 for "Semiconductor device with a fin-shaped active region and a gate electrode" (South Korean Inventors)

Press/Media: Press / Media

Period2024 Jun 19

Media coverage

1

Media coverage

  • TitleUS Patent Issued to SAMSUNG ELECTRONICS on June 18 for "Semiconductor device with a fin-shaped active region and a gate electrode" (South Korean Inventors)
    Media name/outletUS Fed News
    Country/TerritoryUnited States
    Date24/6/19
    PersonsJae Hoon Lee
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