Research output per year
Research output per year
Fingerprint
Dive into the research topics where Changhwan Shin is active. These topic labels come from the works of this person. Together they form a unique fingerprint.
- 1 Similar Profiles
Collaborations and top research areas from the last five years
Recent external collaboration on country/territory level. Dive into details by clicking on the dots or
-
Analysis of Ring Oscillator Characteristics Induced by Line Edge Roughness Using Convolution Neural Network
Kim, M., Jang, E., Lim, J. & Shin, C., 2025, In: IEEE Transactions on Electron Devices. 72, 7, p. 3387-3393 7 p.Research output: Contribution to journal › Article › peer-review
1 Citation (Scopus) -
A Novel 3D-SRAM Architecture Based on Vertical GAA Transistors for Advanced AI and Edge Computing Applications
Han, C., Park, H., Choi, Y., Lim, J. & Shin, C., 2025, In: IEEE Transactions on Electron Devices. 72, 12, p. 6447-6452 6 p.Research output: Contribution to journal › Article › peer-review
-
Backside Contact Misalignment-Induced TDDB in BSPDN CFET
Park, D., Jang, E., Choi, M. & Shin, C., 2025, In: IEEE Transactions on Electron Devices. 72, 9, p. 4648-4654 7 p.Research output: Contribution to journal › Article › peer-review
-
Comparative analysis of NMOS-/PMOS-based 3D Fe-NAND using TCAD simulation
Lee, T. & Shin, C., 2025 Jun 30, In: Semiconductor Science and Technology. 40, 6, 065007.Research output: Contribution to journal › Article › peer-review
-
Comprehensive Understanding of Fatigue, Breakdown, and Recovery Mechanism by Thickness Scaling in Hf0.5Zr0.5O2/Ge MF(I)S Capacitors for Low Writing Voltages
Jeong, J. Y., Ko, K., Shin, C. & Han, J. H., 2025 Aug 12, In: ACS Applied Electronic Materials. 7, 15, p. 6770-6783 14 p.Research output: Contribution to journal › Article › peer-review
Press/Media
-
Study Findings on Machine Learning Are Outlined in Reports from Korea University (Hybrid Convolutional Neural Network-analytical Model for Prediction of Line Edge Roughness-induced Performance Variations In Fin-shaped Field-effect Transistor ...)
26/1/8
1 item of Media coverage
Press/Media: Press / Media
-
U.S. Patents Awarded to Inventors in California (Dec. 31)
25/12/31
1 item of Media coverage
Press/Media: Press / Media
-
Study Findings from Korea University Broaden Understanding of Technology ( z -interference Mitigation In 3-d Ferro- nand )
25/10/15
1 item of Media coverage
Press/Media: Press / Media
-
Research Conducted at Korea University Has Updated Our Knowledge about Networks (Analysis of Ring Oscillator Characteristics Induced By Line Edge Roughness Using Convolution Neural Network)
25/6/13
1 item of Media coverage
Press/Media: Press / Media
-
R&D: Comparative Analysis of NMOS-/PMOS-Based 3D Fe-NAND Using TCAD Simulation
25/6/5
1 item of Media coverage
Press/Media: Press / Media