Material Science
Germanium
100%
Field Effect Transistor
58%
Electrical Resistivity
56%
Transistor
54%
Schottky Barrier
46%
Annealing
41%
Semiconductor Structure
36%
Doping (Additives)
34%
Density
31%
Dielectric Material
30%
Contact Resistance
30%
Metal-Oxide-Semiconductor Field-Effect Transistor
29%
Silicon
28%
Film
24%
ZnO
23%
Gallium Arsenide
21%
Electronic Circuit
20%
Surface (Surface Science)
20%
Titanium Dioxide
19%
Thermal Stability
17%
Ferroelectric Material
16%
Zinc Oxide
16%
Nitride Compound
16%
Transition Metal Dichalcogenide
15%
Indium
14%
Thin-Film Transistor
13%
Capacitor
12%
Al2O3
11%
Oxide Compound
11%
Gallium
11%
Graphene
10%
Electroluminescence
10%
III-V Semiconductor
10%
Neuromorphic Computing
10%
Heteroepitaxy
9%
Complementary Metal-Oxide-Semiconductor Device
9%
Tantalum
9%
Switch
9%
Molybdenum
8%
Oxide Semiconductor
8%
Thin Films
8%
Capacitance
8%
Metal Oxide
8%
Semiconductor Device
7%
Tin
6%
Zirconia
6%
Light-Emitting Diode
6%
Microelectromechanical System
6%
Epitaxy
6%
Quantum Well
6%
Keyphrases
Germanium
75%
Metal-semiconductor-metal
55%
Contact Structure
39%
Contact Resistance
34%
High Performance
33%
Metal-interlayer-semiconductor Structure
30%
Contact Resistivity
29%
Fermi Level pinning
26%
Schottky Barrier Height
25%
Field-effect Transistors
24%
Semiconductor Contacts
22%
SiGe
22%
Low Temperature
21%
Ohmic Contact
21%
Molybdenite
20%
Specific Contact Resistivity
19%
Metal-induced Gap States
19%
GeO2
19%
Rutile
19%
Gallium Arsenide
17%
Interface Traps
16%
On-state Current
16%
Annealing
16%
Resistance Reduction
15%
Fin Field-effect Transistor (FinFET)
15%
Fermi-level Unpinning
14%
Transistor
14%
Gate Stack
14%
Photodetector
14%
Atomic Layer Deposited
14%
Heavily Doped
14%
Monolithic Integration
13%
Monolithic 3D Integration
13%
Junctionless FET
13%
Graphene
13%
Amorphous InGaZnO (a-IGZO)
13%
Neuromorphic System
13%
Dopant Activation
12%
Artificial Synapses
12%
Interfacial Layer
12%
Ge MOSFET
12%
High Thermal Stability
12%
Doping Concentration
12%
Hydrogen Annealing
11%
Ultra-low
11%
Cm(III)
11%
Threshold Voltage
11%
Silicon-germanium
11%
Novel Sources
11%
Semiconductors
10%
Engineering
Interlayer
53%
Field-Effect Transistor
35%
Fermi Level
31%
Metal-Oxide-Semiconductor Field-Effect Transistor
26%
Low-Temperature
22%
Field Effect Transistor
19%
Passivation
16%
Photodetector
14%
Barrier Height
14%
Dopants
14%
Gate Stack
14%
Atomic Layer
14%
Engineering
13%
Dielectrics
13%
Photometer
13%
Metallizations
13%
Schottky Barrier
13%
Monolithic Integration
12%
Plasma Treatment
12%
Energy Engineering
11%
Nodes
10%
Molybdenum Disulfide
10%
Current Ratio
10%
Two Dimensional
10%
Switching Threshold
10%
Photodiode
10%
Luminaires
10%
Negative Differential Resistance
10%
Band Gap
9%
Dopant Activation
9%
Si Substrate
8%
Logic Circuit
8%
Nanosheet
8%
Integrated Optoelectronics
8%
Gallium Arsenide
7%
Nitride
7%
Interface Trap
7%
Ar Plasma
7%
Transition Metal Dichalcogenide
7%
Inverter
7%
Microelectromechanical System
7%
Light-Emitting Diode
7%
Graphene
6%
Interfacial Layer
6%
Thin Films
6%
Monolithic 3d Integration
6%
Tensile Strain
6%
Quantum Well
6%
Experimental Investigation
6%
Theoretical Investigation
6%
