Material Science
Film
100%
Density
69%
Photoluminescence
69%
Light-Emitting Diode
64%
ZnO
63%
Sapphire
58%
Nanoparticle
52%
Quantum Well
49%
Surface (Surface Science)
49%
Chemical Vapor Deposition
38%
Heterojunction
36%
Optical Property
32%
Thin Films
30%
Nanorod
28%
Surface Plasmon
26%
Quantum Dot
23%
Luminescence
23%
Vapor Phase Epitaxy
22%
Metal-Organic Chemical Vapor Deposition
21%
Hydrogen Evolution
18%
Epilayers
18%
Buffer Layer
18%
Cerium Oxide
17%
Aluminum Nitride
17%
Hydride
15%
Oxide Compound
15%
Activation Energy
15%
Capacitance
15%
Charge Carrier
14%
Photocatalysts
14%
Water Splitting
13%
Annealing
12%
Phase Composition
12%
Nanostructure
12%
Dry Etching
12%
Deep-Level Transient Spectroscopy
11%
X-Ray Diffraction
11%
Silica Nanoparticle
11%
Structural Property
11%
Schottky Diode
11%
Surface Morphology
11%
Scanning Electron Microscopy
10%
Gallium Nitride
10%
Nitride Compound
9%
Nitrogen-Doped Graphene
9%
Nanowire
9%
Carbon Quantum Dot
9%
Zinc Oxide
9%
Indium
9%
Dye-Sensitized Solar Cell
8%
Keyphrases
Indium Gallium Nitride (InGaN)
94%
Metal-organic Chemical Vapor Deposition (MOCVD)
66%
Light-emitting Diodes
53%
Electrical Properties
44%
Deep Traps
43%
N-GaN
43%
Epitaxial Lateral Overgrowth
37%
GaN Films
37%
Multiple Quantum Wells
36%
Undoped
33%
Optical Properties
30%
Sapphire
29%
Localized Surface Plasmon Resonance
27%
Nanopillars
26%
Electron Traps
25%
Ga2O3
24%
Quantum Well
22%
Nonradiative Energy Transfer
20%
Structural Properties
20%
SiO2 Nanoparticles
20%
Epitaxial
20%
InGaN Quantum Wells
17%
Hole Trapping
17%
Photoluminescence
17%
Deep Electron Traps
17%
Sapphire Substrate
16%
P-GaN
16%
Electron Beam Induced Current
16%
Low Temperature
15%
Room Temperature
15%
Core-shell Nanoparticles
15%
Hydride Vapor Phase Epitaxy
15%
GaN-based Light-emitting Diodes
14%
Dry Etching
14%
Irradiation
14%
Ag@SiO2
14%
ZnO Nanorods
14%
Dislocation
14%
Photocatalyst
14%
Growth Temperature
13%
Activation Energy
13%
Copper(II) Oxide
13%
Quantum Dots
13%
Blue Light-emitting Diodes
13%
Deep Level Transient Spectroscopy
13%
GaN Layers
13%
AlGaN-GaN
12%
Si(111) Substrate
12%
ZnO Film
12%
Nanoparticles
12%
Engineering
Light-Emitting Diode
61%
Quantum Well
45%
Chemical Vapor Deposition
29%
Nanoparticle
29%
Vapor Deposition
28%
Surface Plasmon
25%
Electron Trap
25%
Nanopillar
23%
Dislocation Density
20%
Metal Organic Chemical Vapor Deposition
19%
Diffusion Length
19%
Deep Level
17%
Energy Engineering
17%
Quantum Dot
15%
Thin Films
15%
Sapphire Substrate
15%
Silicon Dioxide
14%
Heterojunctions
14%
Room Temperature
14%
Growth Temperature
13%
Silica Nanoparticle
13%
Nitride
13%
Transients
12%
Structural Property
11%
Activation Energy
11%
Low-Temperature
11%
Band Edge
11%
Basal Plane
10%
Core Shell Nanoparticles
10%
Heterostructures
10%
Fermi Level
9%
Blue Light
9%
Core-Shell
9%
Photodetector
9%
Ray Diffraction
8%
Recombination Centre
8%
Threading Dislocation
8%
Dry Etching
7%
Buffer Layer
7%
Charge Carrier
7%
Nanowire
7%
Photocatalysts
7%
Removal Rate
7%
Luminaires
7%
Beam Irradiation
6%
Phase Composition
6%
Quantum Efficiency
6%
Solar Cell
6%
Radiative Recombination
6%
Crystalline Quality
6%