Material Science
Film
100%
Photoluminescence
70%
Density
69%
ZnO
63%
Sapphire
59%
Light-Emitting Diode
57%
Nanoparticle
51%
Quantum Well
48%
Chemical Vapor Deposition
39%
Heterojunction
34%
Optical Property
31%
Thin Films
27%
Surface Plasmon
24%
Vapor Phase Epitaxy
24%
Nanorod
24%
Quantum Dot
23%
Metal-Organic Chemical Vapor Deposition
22%
Luminescence
21%
Crystalline Material
21%
Hydrogen Evolution
18%
Epilayers
18%
Buffer Layer
18%
Nanocrystalline Material
17%
Aluminum Nitride
17%
Cerium Oxide
16%
Hydride
15%
Activation Energy
15%
Charge Carrier
15%
Capacitance
15%
Oxide Compound
15%
Photocatalysts
14%
Dry Etching
12%
Deep-Level Transient Spectroscopy
12%
Schottky Diode
12%
Annealing
12%
Silica Nanoparticle
11%
X-Ray Diffraction
11%
Surface Morphology
11%
Structural Property
11%
Water Splitting
11%
Scanning Electron Microscopy
10%
Gallium Nitride
10%
Nitride Compound
9%
Nitrogen-Doped Graphene
9%
Nanowire
9%
Carbon Quantum Dot
9%
Zinc Oxide
9%
Indium
9%
Electron Irradiation
8%
Dye-Sensitized Solar Cell
8%
Engineering
Light-Emitting Diode
46%
Quantum Well
36%
Nanoparticle
32%
Chemical Vapor Deposition
24%
Surface Plasmon
23%
Vapor Deposition
23%
Electron Trap
21%
Defects
20%
Nanopillar
17%
Dislocation Density
16%
Core-Shell
16%
Diffusion Length
16%
Energy Engineering
15%
Thin Films
14%
Sapphire Substrate
13%
Silica Nanoparticle
13%
Quantum Dot
12%
Deep Level
12%
Room Temperature
11%
Photodetector
11%
Metal Organic Chemical Vapor Deposition
11%
Growth Temperature
11%
Nitride
11%
Band Edge
11%
Low-Temperature
9%
Heterojunctions
9%
Ray Diffraction
9%
Activation Energy
8%
Recombination Centre
7%
Structural Property
7%
Charge Carrier
7%
Nanowires
7%
Transients
7%
Crystalline Quality
7%
Heterostructures
7%
Basal Plane
7%
Buffer Layer
7%
Threading Dislocation
7%
Quantum Efficiency
6%
Hydrogen Gas
6%
Radiative Recombination
6%
Photocatalysts
6%
Shallower
5%
Nanorod
5%
Plasmonics
5%
Transmissions
5%
Incorporation Efficiency
5%
Keyphrases
Indium Gallium Nitride (InGaN)
45%
Light-emitting Diodes
26%
Metal-organic Chemical Vapor Deposition (MOCVD)
23%
Multiple Quantum Wells
18%
Epitaxial Lateral Overgrowth
16%
Nanopillars
16%
Quantum Well
15%
Optical Properties
14%
Localized Surface Plasmon Resonance
13%
Electron Traps
13%
GaN Films
13%
Deep Traps
13%
SiO2 Nanoparticles
12%
Electrical Properties
12%
Nonradiative Energy Transfer
12%
Ga2O3
10%
N-GaN
10%
Growth Temperature
10%
Undoped
9%
InGaN Quantum Wells
8%
Electron Beam Induced Current
8%
Epitaxial
8%
Electron Beam Irradiation
8%
Gallium Nitride
8%
Quantum Heterostructure
7%
Photoluminescence
7%
Sapphire
7%
Deep Electron Traps
7%
Ag@SiO2
7%
Quantum Dots
7%
Dry Etching
7%
ZnCdSe
7%
GaN-based Light-emitting Diodes
6%
Si(111) Substrate
6%
Structural Properties
6%
Donor Concentration
6%
Room Temperature
6%
Multi-quantum-well Structures
6%
Irradiation
6%
P-GaN
6%
GaN Layers
5%
Dye-sensitized Solar Cells
5%
Crystal Quality
5%
Si(111)
5%
GaN Nanopillars
5%
Silica
5%
Diffusion Length
5%
Quantum Efficiency
5%
Hole Trapping
5%
ZnO Film
5%