Engineering
Bipolar Transistor
100%
Heterojunctions
73%
Output Power
51%
Amplifier
44%
Voltage-Controlled Oscillator
37%
Electric Power Utilization
31%
Terahertz
31%
Source Signal
29%
Mixers (Machinery)
28%
Phase Noise
26%
Circuit Design
19%
Max
14%
Responsivity
13%
Monolithic Integrated Circuits
13%
Radio Frequency
12%
Conversion Gain
12%
Device Performance
12%
Energy Dissipation
11%
Device Structure
11%
Input Power
10%
Cutoff Frequency
10%
Fundamental Mode
10%
Db Bandwidth
10%
Differential Amplifier
9%
Low Noise Amplifier
9%
Phase Locked Loop
9%
Heterodyne Receiver
9%
Resonator
9%
Local Oscillator
9%
V-Band
9%
Supply Voltage
8%
Frequency Noise
8%
Current Collector
8%
Harmonics
8%
Monolithic Microwave Integrated Circuits
8%
Measured Phase
8%
Detector Array
8%
Broadband Communication
7%
Waveguide
7%
Q Factor
7%
X-Band
7%
Measured Output
7%
Parasitic Capacitance
7%
Maximum Output Power
7%
Signal Power
7%
Thermal Resistance
7%
Chip Area
6%
Field-Effect Transistor
6%
Varactor
6%
Nanowires
6%
Keyphrases
SiGe HBT
29%
InP HBT
16%
Voltage-controlled Oscillator
14%
SiGe
13%
65nm CMOS
10%
Parameter Shifts
10%
SiGe HBT Technology
9%
Heterojunction Bipolar Transistors
9%
Common Base
9%
Oscillator Basis
9%
Transistor
8%
Fmax
8%
Circuit Design
8%
InP Heterojunction Bipolar Transistors
7%
Fundamental Mode
7%
Si-based
7%
Noise Equivalent Power
6%
Heterodyning
6%
Gate Delay
6%
Product Application
6%
Product Technology
6%
Communications Applications
6%
Millimeter-wave Applications
6%
Si Heterojunction
6%
Current Density
6%
BiCMOS Technology
6%
High Performance
6%
Signal Source
5%
Peak Power Output
5%
Power Output
5%
Frequency Doubler
5%
BVCEO
5%
Transistor Technology
5%
Colpitts
5%
Bipolar Transistor
5%
