Keyphrases
SiGe HBT
93%
Heterojunction Bipolar Transistors
55%
SiGe
45%
Voltage-controlled Oscillator
32%
65nm CMOS
31%
Fmax
28%
SiGe BiCMOS
27%
Transistor Technology
27%
Transistor
26%
Common Base
26%
InP HBT
24%
SiGe HBT Technology
24%
Power Output
23%
Mixer
23%
Signal Source
22%
Si-based
21%
InP Heterojunction Bipolar Transistors
21%
RF CMOS
20%
Phase Noise
20%
Coupled Line
18%
Oscillator Basis
18%
Injection-locked Frequency Divider
17%
Terahertz
17%
Current Density
17%
Oscillation Frequency
17%
Heterodyning
16%
D-band
15%
High Performance
15%
Bipolar Transistor
15%
CMOS Technology
14%
Peak Gain
14%
Circuit Design
12%
Communications Applications
12%
Responsivity
12%
Varactor
11%
Noise Figure
11%
Power Dissipation
11%
Ring Oscillator
11%
Bulk Acoustic Wave Resonator
11%
Locking Range
11%
DC Power
11%
Conversion Gain
11%
Wideband
10%
Source-driven
9%
250-nm InP
9%
BVCEO
9%
Noise Equivalent Power
9%
Low Power
9%
Chip Size
9%
Frequency Doubler
9%
Engineering
Bipolar Transistor
100%
Heterojunctions
80%
Oscillator
62%
Amplifier
50%
Output Power
38%
Terahertz
36%
Voltage-Controlled Oscillator
34%
Mixers (Machinery)
32%
Electric Power Utilization
26%
Source Signal
24%
Phase Noise
22%
Circuit Design
18%
Resonator
16%
Responsivity
16%
Metal-Oxide-Semiconductor Field-Effect Transistor
14%
Low Noise Amplifier
13%
Noise Figure
13%
Cutoff Frequency
12%
Energy Dissipation
11%
Radio Frequency
11%
Varactor
11%
Conversion Gain
11%
Max
11%
Device Structure
10%
Detector Array
10%
Input Power
10%
V-Band
9%
Monolithic Integrated Circuits
9%
Nanowire
9%
Q Factor
9%
Device Performance
8%
Supply Voltage
8%
Local Oscillator
8%
Fundamental Mode
8%
Harmonics
8%
Heat Resistance
7%
Field-Effect Transistor
7%
Frequency Noise
7%
Differential Amplifier
7%
Phase Locked Loop
7%
Db Bandwidth
6%
Breakdown Voltage
6%
Power Amplifier
6%
Antenna
6%
Single Chip
6%
Computer Aided Design
6%
Energy Engineering
6%
Front End
6%
X-Band
6%
Current Collector
6%
