Material Science
Silicon
100%
Quantum Dot
76%
Surface (Surface Science)
58%
Gallium Arsenide
55%
Lithography
52%
Film
47%
Thin-Film Transistor
43%
Thin Films
36%
Waveguide
31%
Density
29%
Carbon Nanotube
26%
Photoluminescence
26%
Nanowire
23%
Aluminium Gallium Arsenide
23%
Ferroelectric Material
23%
Electrical Property
22%
Nanoparticle
22%
Display Device
19%
Annealing
19%
Sapphire
18%
Field Effect Transistor
16%
Crystal Defect
16%
Indium
16%
Current Voltage Characteristics
15%
Dielectric Material
15%
Molecular Beam Epitaxy
15%
Schottky Diode
14%
Surface Stress
14%
Piezoelectricity
14%
Electronic Circuit
14%
Polystyrene
13%
Transistor
13%
Laser Diode
13%
Optical Property
12%
Dry Etching
11%
Reactive Ion Etching
11%
Oxide Semiconductor
10%
Current-Voltage Characteristic
10%
Gallium
10%
Zinc Oxide
10%
Schottky Barrier
10%
Nanostructure
10%
Heterojunction
9%
Aluminum
8%
X-Ray Diffraction
8%
Molybdenum
8%
Microelectromechanical System
8%
Al2O3
8%
Oxynitride
8%
Chemical Vapor Deposition
8%
Keyphrases
GaAs-AlGaAs
45%
Gallium Arsenide
44%
Laser Interference Lithography
35%
InAs Quantum Dots
31%
Quantum Dots
31%
Self-assembled Quantum Dots
28%
Quantum Wire
27%
Electrical Characteristics
24%
Plasmonic Color Filters
21%
Waveguide
21%
Display Devices
19%
Field Emission Properties
19%
Dielectrophoretic Force
18%
Wire Array
18%
Microcantilever
18%
Nanomechanics
18%
Glass Substrate
17%
Pentacene Thin Film Transistor
17%
Pentacene
16%
A-plane
16%
Amorphous InGaZnO (a-IGZO)
16%
Current Blocking Layer
16%
Current-voltage Characteristics
16%
Silicon Substrate
15%
Optical Properties
15%
Fabrication Methods
15%
Molecular Beam Epitaxy
15%
Gate Structure
15%
A-plane GaN
15%
Large-area Display
14%
Fluorescence Detection
14%
GaAs Quantum Dot
14%
AlGaN-GaN
14%
Field Emitter Array
14%
Quantum Wire Laser
14%
Electro-absorption Modulator
14%
SiNx
14%
P-n Junction
13%
Thin-film Transistors
13%
Structural Properties
13%
Metal-organic Chemical Vapor Deposition (MOCVD)
13%
Quantum Dot Laser Diode
13%
Multi-walled Carbon Nanotubes (MWCNTs)
12%
Single Quantum Dot
12%
Rib Waveguide
12%
Photodiode
12%
R-plane Sapphire
12%
Reactive Ion Etching
12%
Electrical Properties
12%
Si-doped
11%
Engineering
Gallium Arsenide
78%
Quantum Dot
64%
Aluminium Gallium Arsenide
34%
Thin Films
33%
Plasmonics
27%
Quantum Wire
25%
Laser Interference Lithography
24%
Color Filter
21%
Thin-Film Transistor
21%
Waveguide
20%
Nanowire
19%
Silicon Substrate
18%
Flat Surface
14%
Passivation
13%
Current-Voltage Characteristic
13%
Field-Effect Transistor
13%
Chemical Vapor Deposition
13%
Vapor Deposition
13%
Photodiode
12%
Light Source
12%
Atomic Force Microscopy
11%
Schottky Barrier
11%
Glass Substrate
11%
Nanoparticle
11%
Room Temperature
10%
Dry Etching
10%
Interlayer
10%
Solar Cell
10%
Quantum Well
10%
Sapphire Substrate
10%
Channel Length
9%
Silicon Dioxide
9%
Etching Process
9%
Plasma Treatment
9%
Horn Antenna
9%
Piezoelectric
8%
Antenna
8%
Output Power
8%
Ray Diffraction
8%
Biosensor
8%
Schottky Barrier Diode
8%
C-Band
8%
Resonant Frequency
8%
Interfacial Energy
8%
Nitride
8%
Low-Temperature
8%
Basal Plane
8%
Superlattice
8%
Si Substrate
7%
High Resolution
7%
