Keyphrases
Annealing
69%
Ohmic Contact
66%
Light-emitting Diodes
58%
P-GaN
41%
Low Resistance
34%
GaN-based Light-emitting Diodes
34%
Electrical Properties
32%
Indium Gallium Nitride (InGaN)
26%
Light Output
22%
GaN-based
20%
Structural Properties
20%
Optical Properties
19%
Ohmic
17%
Specific Contact Resistance
17%
Thermally Stable
16%
GaInP
16%
Electrical Characteristics
16%
P-type
16%
Indium Tin Oxide
15%
Flip-chip Light-emitting Diode
15%
Vertical Light-emitting Diodes
15%
Transmission Electron Microscopy
15%
High Performance
13%
Au Contacts
13%
X-ray Photoemission Spectroscopy
13%
N-type GaN
12%
Metal Organic Vapor Phase Epitaxy (MOVPE)
12%
As-deposited
12%
Micro-light-emitting Diodes (micro-LEDs)
11%
Aluminum Gallium Nitride (AlGaN)
11%
Transmission Electron Diffraction
11%
Power Output
11%
Ag Contact
10%
Transmittance
10%
Schottky Barrier Height
10%
Reflector
10%
Silica
10%
Cm(III)
9%
Epitaxial Layers
9%
Indium Oxide
9%
Annealing Temperature
9%
X Ray Diffraction
9%
Thermal Stability
9%
AlGaInP
9%
Gallium Arsenide
9%
Ultraviolet Light-emitting Diode (UV-LED)
9%
High Power
8%
Ni-Au
8%
TiAl
8%
Multilayer Film
8%
Material Science
Light-Emitting Diode
87%
Film
52%
Surface (Surface Science)
44%
ZnO
37%
Indium Tin Oxide
37%
Thin Films
29%
Annealing
28%
Contact Resistance
26%
Oxide Compound
19%
X-Ray Photoelectron Spectroscopy
18%
Optical Property
18%
Transmission Electron Microscopy
18%
Electrical Resistivity
16%
Indium
16%
Schottky Barrier
15%
X-Ray Diffraction
14%
Electrical Property
14%
Density
14%
Electron Diffraction
13%
Gallium Arsenide
13%
Photoluminescence
12%
Structural Property
11%
Vapor Phase Epitaxy
11%
Molecular Beam Epitaxy
10%
Superlattice
10%
Carrier Concentration
10%
Nanowire
9%
Nanoparticle
9%
Quantum Dot
9%
Multilayer Film
9%
Epitaxial Film
9%
Titanium Dioxide
9%
Thermal Stability
8%
Scanning Electron Microscopy
8%
Heterojunction
8%
Auger Electron Spectroscopy
8%
Phase Composition
8%
Solid Solutions
8%
Silicide
7%
Doping (Additives)
7%
Zinc Oxide
7%
Sapphire
7%
Organic Solar Cells
7%
Aluminum Nitride
6%
Solar Cell
6%
Silicon
6%
Magnetron Sputtering
6%
Quantum Well
6%
Photoemission Spectroscopy
5%
Chemical Vapor Deposition
5%
Engineering
Light-Emitting Diode
100%
Ohmic Contacts
55%
Photoemission
17%
Output Power
15%
Thin Films
15%
Ray Diffraction
14%
Interlayer
13%
Light Output Power
13%
Schottky Barrier
12%
Barrier Height
11%
Indium-Tin-Oxide
11%
Reflectance
11%
Epitaxial Film
10%
Superlattice
10%
Silicon Dioxide
10%
Quantum Well
9%
Electron Diffraction
9%
Solid Solutions
9%
Light Output
9%
Quantum Dot
9%
Gallium Arsenide
8%
Bias Voltage
8%
Annealing Temperature
7%
Current Injection
7%
Forward Bias
6%
External Quantum Efficiency
6%
Growth Temperature
6%
Forward Voltage
6%
Capping Layer
6%
Carrier Concentration
6%
Band Gap
6%
Structural Property
6%
Nanowire
6%
Ultraviolet Light
6%
Phase Composition
5%
Nitride
5%
Room Temperature
5%
Heterostructures
5%
Polycrystalline
5%
Blue Light
5%
Electrode Type
5%
Nanoparticle
5%
