1 GeV proton damage in β-Ga2O3

A. Y. Polyakov; I. V. Shchemerov; A. A. Vasilev; A. I. Kochkova; N. B. Smirnov; A. V. Chernykh; E. B. Yakimov; P. B. Lagov; Yu S. Pavlov; E. M. Ivanov; O. G. Gorbatkova; A. S. Drenin; M. E. Letovaltseva; Minghan Xian; Fan Ren; Jihyun Kim; S. J. Pearton

doi:10.1063/5.0068306

1 GeV proton damage in β-Ga₂O₃

A. Y. Polyakov, I. V. Shchemerov, A. A. Vasilev, A. I. Kochkova, N. B. Smirnov, A. V. Chernykh, E. B. Yakimov, P. B. Lagov, Yu S. Pavlov, E. M. Ivanov, O. G. Gorbatkova, A. S. Drenin, M. E. Letovaltseva, Minghan Xian, Fan Ren, Jihyun Kim, S. J. Pearton

Department of Chemical and Biological Engineering

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

The changes of electrical properties and deep trap spectra induced in n-type β-Ga2O3 by 1 GeV protons with a fluence of 4 × 1013 cm-2 were studied. The carrier removal rates were ∼100 cm-1 at this energy. For comparison, for 20 MeV proton irradiation at comparable fluences (5-10 × 1014 cm-2), the removal rate was ∼400 cm-1 for donor concentrations of 3 × 1016 cm-3 and ∼100 cm-1 for concentrations of <1016 cm-3. These removal rates were in stark contrast with modeling results that predicted the introduction rates of vacancies to be two orders of magnitude higher for 20 MeV protons. Measurements of deep electron and hole traps densities by deep level transient spectroscopy with electrical or optical injection (DLTS or ODLTS), and capacitance-voltage profiling under monochromatic light illumination showed that the 1 GeV proton irradiation resulted in the introduction of deep donors E2*(Ec-0.75 eV) and E3 (Ec-1 eV) and deep acceptors with optical ionization threshold near 2.3 eV producing a feature near 250 K in ODLTS and 3.1 eV with related ODLTS feature near 450 K. The total concentration of all deep traps was much lower than that necessary to explain the observed decrease in net donor density upon irradiation. The donor densities showed a nonuniform distribution in proton irradiated films with the concentration greatly decreased toward the surface. Possible reasons for the observed performance are discussed.

Original language	English
Article number	185701
Journal	Journal of Applied Physics
Volume	130
Issue number	18
DOIs	https://doi.org/10.1063/5.0068306
Publication status	Published - 2021 Nov 14

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/5.0068306

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Polyakov, A. Y., Shchemerov, I. V., Vasilev, A. A., Kochkova, A. I., Smirnov, N. B., Chernykh, A. V., Yakimov, E. B., Lagov, P. B., Pavlov, Y. S., Ivanov, E. M., Gorbatkova, O. G., Drenin, A. S., Letovaltseva, M. E., Xian, M., Ren, F., Kim, J., & Pearton, S. J. (2021). 1 GeV proton damage in β-Ga₂O₃. Journal of Applied Physics, 130(18), [185701]. https://doi.org/10.1063/5.0068306

@article{870af7c2555b4264b0510c8b2e609cf8,

title = "1 GeV proton damage in β-Ga2O3",

abstract = "The changes of electrical properties and deep trap spectra induced in n-type β-Ga2O3 by 1 GeV protons with a fluence of 4 × 1013 cm-2 were studied. The carrier removal rates were ∼100 cm-1 at this energy. For comparison, for 20 MeV proton irradiation at comparable fluences (5-10 × 1014 cm-2), the removal rate was ∼400 cm-1 for donor concentrations of 3 × 1016 cm-3 and ∼100 cm-1 for concentrations of <1016 cm-3. These removal rates were in stark contrast with modeling results that predicted the introduction rates of vacancies to be two orders of magnitude higher for 20 MeV protons. Measurements of deep electron and hole traps densities by deep level transient spectroscopy with electrical or optical injection (DLTS or ODLTS), and capacitance-voltage profiling under monochromatic light illumination showed that the 1 GeV proton irradiation resulted in the introduction of deep donors E2*(Ec-0.75 eV) and E3 (Ec-1 eV) and deep acceptors with optical ionization threshold near 2.3 eV producing a feature near 250 K in ODLTS and 3.1 eV with related ODLTS feature near 450 K. The total concentration of all deep traps was much lower than that necessary to explain the observed decrease in net donor density upon irradiation. The donor densities showed a nonuniform distribution in proton irradiated films with the concentration greatly decreased toward the surface. Possible reasons for the observed performance are discussed. ",

author = "Polyakov, {A. Y.} and Shchemerov, {I. V.} and Vasilev, {A. A.} and Kochkova, {A. I.} and Smirnov, {N. B.} and Chernykh, {A. V.} and Yakimov, {E. B.} and Lagov, {P. B.} and Pavlov, {Yu S.} and Ivanov, {E. M.} and Gorbatkova, {O. G.} and Drenin, {A. S.} and Letovaltseva, {M. E.} and Minghan Xian and Fan Ren and Jihyun Kim and Pearton, {S. J.}",

note = "Funding Information: The work at NUST MISiS was supported in part by the Russian Science Foundation, Grant No. 19-19-00409. The work at UF was sponsored by Department of the Defense, Defense Threat Reduction Agency, Interaction of Ionizing Radiation with Matter University Research Alliance (Award No. HDTRA1-20-2-0002) monitored by J. Calkins and also by the National Science Foundation (NSF) under No. DMR 1856662 (James Edgar). Publisher Copyright: {\textcopyright} 2021 Author(s).",

year = "2021",

month = nov,

day = "14",

doi = "10.1063/5.0068306",

language = "English",

volume = "130",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "18",

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TY - JOUR

T1 - 1 GeV proton damage in β-Ga2O3

AU - Polyakov, A. Y.

AU - Shchemerov, I. V.

AU - Vasilev, A. A.

AU - Kochkova, A. I.

AU - Smirnov, N. B.

AU - Chernykh, A. V.

AU - Yakimov, E. B.

AU - Lagov, P. B.

AU - Pavlov, Yu S.

AU - Ivanov, E. M.

AU - Gorbatkova, O. G.

AU - Drenin, A. S.

AU - Letovaltseva, M. E.

AU - Xian, Minghan

AU - Ren, Fan

AU - Kim, Jihyun

AU - Pearton, S. J.

N1 - Funding Information: The work at NUST MISiS was supported in part by the Russian Science Foundation, Grant No. 19-19-00409. The work at UF was sponsored by Department of the Defense, Defense Threat Reduction Agency, Interaction of Ionizing Radiation with Matter University Research Alliance (Award No. HDTRA1-20-2-0002) monitored by J. Calkins and also by the National Science Foundation (NSF) under No. DMR 1856662 (James Edgar). Publisher Copyright: © 2021 Author(s).

PY - 2021/11/14

Y1 - 2021/11/14

N2 - The changes of electrical properties and deep trap spectra induced in n-type β-Ga2O3 by 1 GeV protons with a fluence of 4 × 1013 cm-2 were studied. The carrier removal rates were ∼100 cm-1 at this energy. For comparison, for 20 MeV proton irradiation at comparable fluences (5-10 × 1014 cm-2), the removal rate was ∼400 cm-1 for donor concentrations of 3 × 1016 cm-3 and ∼100 cm-1 for concentrations of <1016 cm-3. These removal rates were in stark contrast with modeling results that predicted the introduction rates of vacancies to be two orders of magnitude higher for 20 MeV protons. Measurements of deep electron and hole traps densities by deep level transient spectroscopy with electrical or optical injection (DLTS or ODLTS), and capacitance-voltage profiling under monochromatic light illumination showed that the 1 GeV proton irradiation resulted in the introduction of deep donors E2*(Ec-0.75 eV) and E3 (Ec-1 eV) and deep acceptors with optical ionization threshold near 2.3 eV producing a feature near 250 K in ODLTS and 3.1 eV with related ODLTS feature near 450 K. The total concentration of all deep traps was much lower than that necessary to explain the observed decrease in net donor density upon irradiation. The donor densities showed a nonuniform distribution in proton irradiated films with the concentration greatly decreased toward the surface. Possible reasons for the observed performance are discussed.

AB - The changes of electrical properties and deep trap spectra induced in n-type β-Ga2O3 by 1 GeV protons with a fluence of 4 × 1013 cm-2 were studied. The carrier removal rates were ∼100 cm-1 at this energy. For comparison, for 20 MeV proton irradiation at comparable fluences (5-10 × 1014 cm-2), the removal rate was ∼400 cm-1 for donor concentrations of 3 × 1016 cm-3 and ∼100 cm-1 for concentrations of <1016 cm-3. These removal rates were in stark contrast with modeling results that predicted the introduction rates of vacancies to be two orders of magnitude higher for 20 MeV protons. Measurements of deep electron and hole traps densities by deep level transient spectroscopy with electrical or optical injection (DLTS or ODLTS), and capacitance-voltage profiling under monochromatic light illumination showed that the 1 GeV proton irradiation resulted in the introduction of deep donors E2*(Ec-0.75 eV) and E3 (Ec-1 eV) and deep acceptors with optical ionization threshold near 2.3 eV producing a feature near 250 K in ODLTS and 3.1 eV with related ODLTS feature near 450 K. The total concentration of all deep traps was much lower than that necessary to explain the observed decrease in net donor density upon irradiation. The donor densities showed a nonuniform distribution in proton irradiated films with the concentration greatly decreased toward the surface. Possible reasons for the observed performance are discussed.

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U2 - 10.1063/5.0068306

DO - 10.1063/5.0068306

M3 - Article

AN - SCOPUS:85119051397

SN - 0021-8979

VL - 130

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 18

M1 - 185701

ER -

1 GeV proton damage in β-Ga₂O₃

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