10 MeV proton damage in β-Ga2O3 Schottky rectifiers

Jiancheng Yang; Zhiting Chen; Fan Ren; S. J. Pearton; Gwangseok Yang; Jihyun Kim; Jonathan Lee; Elena Flitsiyan; Leonid Chernyak; Akito Kuramata

doi:10.1116/1.5013155

10 MeV proton damage in β-Ga₂O₃ Schottky rectifiers

Jiancheng Yang, Zhiting Chen, Fan Ren, S. J. Pearton, Gwangseok Yang, Jihyun Kim, Jonathan Lee, Elena Flitsiyan, Leonid Chernyak, Akito Kuramata

Research output: Contribution to journal › Article › peer-review

51 Citations (Scopus)

Abstract

The electrical performance of vertical geometry Ga₂O₃ rectifiers was measured before and after 10 MeV proton irradiation at a fixed fluence of 10¹⁴ cm^-2, as well as subsequent annealing up to 450 °C. Point defects introduced by the proton damage create trap states that reduce the carrier concentration in the Ga₂O₃, with a carrier removal rate of 235.7 cm^-1 for protons of this energy. The carrier removal rates under these conditions are comparable to GaN-based films and heterostructures. Even annealing at 300 °C produces a recovery of approximately half of the carriers in the Ga₂O₃, while annealing at 450 °C almost restores the reverse breakdown voltage. The on/off ratio of the rectifiers was severely degraded by proton damage and this was only partially recovered by 450 °C annealing. The minority carrier diffusion length decreased from ∼340 nm in the starting material to ∼315 nm after the proton irradiation. The reverse recovery characteristics showed little change with values in the range 20-30 ns before and after proton irradiation.

Original language	English
Article number	011206
Journal	Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
Volume	36
Issue number	1
DOIs	https://doi.org/10.1116/1.5013155
Publication status	Published - 2018 Jan 1

Bibliographical note

Funding Information:
The project was sponsored by the Department of the Defense, Defense Threat Reduction Agency, HDTRA1-17-1-011, monitored by Jacob Calkins. The content of the information does not necessarily reflect the position or the policy of the federal government, and no official endorsement should be inferred. The work at Korea University was supported by a Korea University grant, the LG Innotek-Korea University Nano-Photonics Program, the Korea Institute of Energy Technology Evaluation and Planning (KETEP), and the Ministry of Trade, Industry and Energy (MOTIE) of the Republic of Korea (Grant No. 20163010012140). Research at the University of Central Florida was supported in part by the National Science Foundation Award No. ECCS#1624734 and the US-Israel BSF Award No. #2014020. Part of the work at Tamura was supported by “the research and development project for innovation technique of energy conservation” of the New Energy and Industrial Technology Development Organization (NEDO), Japan. The authors also thank Kohei Sasaki from Tamura Corporation for fruitful discussions.

Funding Information:
The project was sponsored by the Department of the Defense, Defense Threat Reduction Agency, HDTRA1-17-1-011, monitored by Jacob Calkins. The content of the information does not necessarily reflect the position or the policy of the federal government, and no official endorsement should be inferred. The work at Korea University was supported by a Korea University grant, the LG Innotek-Korea University Nano-Photonics Program, the Korea Institute of Energy Technology Evaluation and Planning (KETEP), and the Ministry of Trade, Industry and Energy (MOTIE) of the Republic of Korea (Grant No. 20163010012140). Research at the University of Central Florida was supported in part by the National Science Foundation Award No. ECCS#1624734 and the US-Israel BSF Award No. #2014020. Part of the work at Tamura was supported by the research and development project for innovation technique of energy conservation of the New Energy and Industrial Technology Development Organization (NEDO), Japan. The authors also thank Kohei Sasaki from Tamura Corporation for fruitful discussions.

Publisher Copyright:
© 2018 Author(s).

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Instrumentation
Process Chemistry and Technology
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1116/1.5013155

Cite this

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title = "10 MeV proton damage in β-Ga2O3 Schottky rectifiers",

abstract = "The electrical performance of vertical geometry Ga2O3 rectifiers was measured before and after 10 MeV proton irradiation at a fixed fluence of 1014 cm-2, as well as subsequent annealing up to 450 °C. Point defects introduced by the proton damage create trap states that reduce the carrier concentration in the Ga2O3, with a carrier removal rate of 235.7 cm-1 for protons of this energy. The carrier removal rates under these conditions are comparable to GaN-based films and heterostructures. Even annealing at 300 °C produces a recovery of approximately half of the carriers in the Ga2O3, while annealing at 450 °C almost restores the reverse breakdown voltage. The on/off ratio of the rectifiers was severely degraded by proton damage and this was only partially recovered by 450 °C annealing. The minority carrier diffusion length decreased from ∼340 nm in the starting material to ∼315 nm after the proton irradiation. The reverse recovery characteristics showed little change with values in the range 20-30 ns before and after proton irradiation.",

author = "Jiancheng Yang and Zhiting Chen and Fan Ren and Pearton, {S. J.} and Gwangseok Yang and Jihyun Kim and Jonathan Lee and Elena Flitsiyan and Leonid Chernyak and Akito Kuramata",

note = "Funding Information: The project was sponsored by the Department of the Defense, Defense Threat Reduction Agency, HDTRA1-17-1-011, monitored by Jacob Calkins. The content of the information does not necessarily reflect the position or the policy of the federal government, and no official endorsement should be inferred. The work at Korea University was supported by a Korea University grant, the LG Innotek-Korea University Nano-Photonics Program, the Korea Institute of Energy Technology Evaluation and Planning (KETEP), and the Ministry of Trade, Industry and Energy (MOTIE) of the Republic of Korea (Grant No. 20163010012140). Research at the University of Central Florida was supported in part by the National Science Foundation Award No. ECCS#1624734 and the US-Israel BSF Award No. #2014020. Part of the work at Tamura was supported by “the research and development project for innovation technique of energy conservation” of the New Energy and Industrial Technology Development Organization (NEDO), Japan. The authors also thank Kohei Sasaki from Tamura Corporation for fruitful discussions. Funding Information: The project was sponsored by the Department of the Defense, Defense Threat Reduction Agency, HDTRA1-17-1-011, monitored by Jacob Calkins. The content of the information does not necessarily reflect the position or the policy of the federal government, and no official endorsement should be inferred. The work at Korea University was supported by a Korea University grant, the LG Innotek-Korea University Nano-Photonics Program, the Korea Institute of Energy Technology Evaluation and Planning (KETEP), and the Ministry of Trade, Industry and Energy (MOTIE) of the Republic of Korea (Grant No. 20163010012140). Research at the University of Central Florida was supported in part by the National Science Foundation Award No. ECCS#1624734 and the US-Israel BSF Award No. #2014020. Part of the work at Tamura was supported by the research and development project for innovation technique of energy conservation of the New Energy and Industrial Technology Development Organization (NEDO), Japan. The authors also thank Kohei Sasaki from Tamura Corporation for fruitful discussions. Publisher Copyright: {\textcopyright} 2018 Author(s).",

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T1 - 10 MeV proton damage in β-Ga2O3 Schottky rectifiers

AU - Yang, Jiancheng

AU - Chen, Zhiting

AU - Ren, Fan

AU - Pearton, S. J.

AU - Yang, Gwangseok

AU - Kim, Jihyun

AU - Lee, Jonathan

AU - Flitsiyan, Elena

AU - Chernyak, Leonid

AU - Kuramata, Akito

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N2 - The electrical performance of vertical geometry Ga2O3 rectifiers was measured before and after 10 MeV proton irradiation at a fixed fluence of 1014 cm-2, as well as subsequent annealing up to 450 °C. Point defects introduced by the proton damage create trap states that reduce the carrier concentration in the Ga2O3, with a carrier removal rate of 235.7 cm-1 for protons of this energy. The carrier removal rates under these conditions are comparable to GaN-based films and heterostructures. Even annealing at 300 °C produces a recovery of approximately half of the carriers in the Ga2O3, while annealing at 450 °C almost restores the reverse breakdown voltage. The on/off ratio of the rectifiers was severely degraded by proton damage and this was only partially recovered by 450 °C annealing. The minority carrier diffusion length decreased from ∼340 nm in the starting material to ∼315 nm after the proton irradiation. The reverse recovery characteristics showed little change with values in the range 20-30 ns before and after proton irradiation.

AB - The electrical performance of vertical geometry Ga2O3 rectifiers was measured before and after 10 MeV proton irradiation at a fixed fluence of 1014 cm-2, as well as subsequent annealing up to 450 °C. Point defects introduced by the proton damage create trap states that reduce the carrier concentration in the Ga2O3, with a carrier removal rate of 235.7 cm-1 for protons of this energy. The carrier removal rates under these conditions are comparable to GaN-based films and heterostructures. Even annealing at 300 °C produces a recovery of approximately half of the carriers in the Ga2O3, while annealing at 450 °C almost restores the reverse breakdown voltage. The on/off ratio of the rectifiers was severely degraded by proton damage and this was only partially recovered by 450 °C annealing. The minority carrier diffusion length decreased from ∼340 nm in the starting material to ∼315 nm after the proton irradiation. The reverse recovery characteristics showed little change with values in the range 20-30 ns before and after proton irradiation.

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