10 MeV proton damage in β-Ga2O3 Schottky rectifiers

Jiancheng Yang, Zhiting Chen, Fan Ren, S. J. Pearton, Gwangseok Yang, Jihyun Kim, Jonathan Lee, Elena Flitsiyan, Leonid Chernyak, Akito Kuramata

Research output: Contribution to journalArticlepeer-review

35 Citations (Scopus)


The electrical performance of vertical geometry Ga2O3 rectifiers was measured before and after 10 MeV proton irradiation at a fixed fluence of 1014 cm-2, as well as subsequent annealing up to 450 °C. Point defects introduced by the proton damage create trap states that reduce the carrier concentration in the Ga2O3, with a carrier removal rate of 235.7 cm-1 for protons of this energy. The carrier removal rates under these conditions are comparable to GaN-based films and heterostructures. Even annealing at 300 °C produces a recovery of approximately half of the carriers in the Ga2O3, while annealing at 450 °C almost restores the reverse breakdown voltage. The on/off ratio of the rectifiers was severely degraded by proton damage and this was only partially recovered by 450 °C annealing. The minority carrier diffusion length decreased from ∼340 nm in the starting material to ∼315 nm after the proton irradiation. The reverse recovery characteristics showed little change with values in the range 20-30 ns before and after proton irradiation.

Original languageEnglish
Article number011206
JournalJournal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
Issue number1
Publication statusPublished - 2018 Jan 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry


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