10-watt x-band grid oscillator

Jonathan B. Hacker, Michael P. De Lisio, Moonil Kim, Cheh Ming Liu, Shi Jie Li, Scott W. Wedge, David B. Rutledge

Research output: Chapter in Book/Report/Conference proceedingConference contribution

18 Citations (Scopus)


A 100-transistor MESFET grid oscillator has been fabricated that generates an effective radiated power of 660 W at 9.8 GHz and has a directivity of 18.0 dB. This corresponds to a total radiated power of 10.3 W, or 103 mW per device. This is the largest recorded output power for a grid oscillator. The grid drain-source bias voltage is 7.4 V and the total drain current for the grid is 6.0 A, resulting in an overall dc-to-rf efficiency of 23%. The pattern of the SSB noise-to-carrier ratio was measured and found to be essentially independent of the radiation angle. The average SSB noise level was -87 dBc/Hz at an offset of 150 kHz from the carrier. An average improvement in the SSB noise-to-carrier ratio of 5 dB was measured for a 100-transistor grid compared to a 16-transistor grid.

Original languageEnglish
Title of host publicationIEEE MTT-S International Microwave Symposium Digest
PublisherPubl by IEEE
Number of pages4
ISBN (Print)0780317793
Publication statusPublished - 1994
EventProceedings of the IEEE MTT-S International Microwave Symposium - San Diego, CA, USA
Duration: 1994 May 231994 May 27

Publication series

NameIEEE MTT-S International Microwave Symposium Digest
ISSN (Print)0149-645X


OtherProceedings of the IEEE MTT-S International Microwave Symposium
CitySan Diego, CA, USA

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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