100-element HBT grid amplifier

Moonil Kim, Emilio A. Sovero, Jonathan B. Hacker, Michael P. De Lisio, Jung Chih Chiao, Shi Jie Li, David R. Gagnon, James J. Rosenberg, David B. Rutledge

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)


A 100-element 10-GHz grid amplifier has been developed. The active devices in the grid are chips with heterojunction bipolar transistor (HBT) differential pairs that include a resistive network to provide self-bias to the base. The planar metal grid structure was empirically designed to provide effective coupling between the HBT's and free space. Two independent measurements, one with focusing lenses, the other without, were used to measure the gain of the grid. In each case, the peak gain of the grid was 10 dB at 10 GHz with a 3 dB bandwidth of 1 GHz. The input and output matches are better than 15 dB at 10 GHz. The maximum output power is 450 mW, and the minimum noise figure is 7 dB. Tests show that the grid is quite tolerant of failures - the output power dropped by only 1 dB when the 10% of the inputs were detuned. The device amplifies beams with incidence angles up to 30° with less than a 3-dB drop in power.

Original languageEnglish
Title of host publicationDigest IEEE MTT-S International Symposium Digest
PublisherPubl by IEEE
Number of pages4
ISBN (Print)0780312090
Publication statusPublished - 1993
EventProceedings of the 1993 IEEE MTT-S International Symposium on Circuits and Systems, Part 4 (of 4) - Atlanta, GA, USA
Duration: 1993 Jun 141993 Jun 18

Publication series

NameIEEE MTT-S International Microwave Symposium Digest
ISSN (Print)0149-645X


OtherProceedings of the 1993 IEEE MTT-S International Symposium on Circuits and Systems, Part 4 (of 4)
CityAtlanta, GA, USA

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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