TY - GEN
T1 - 110 Attojoule-per-bit Efficient Graphene-based Plasmon Modulator on Silicon
AU - Amin, Rubab
AU - Khan, Sikandar
AU - Lee, Cheol J.
AU - Dalir, Hamed
AU - Sorger, Volker J.
N1 - Publisher Copyright:
© 2018 OSA.
Copyright:
Copyright 2018 Elsevier B.V., All rights reserved.
PY - 2018/8/6
Y1 - 2018/8/6
N2 - We demonstrate a plasmonic Graphene-based electro-absorption modulator heterogeneously integrated in Silicon photonics consuming 110 aJ/bit and being 15 μm compact. We show how the plasmonic metal enables steep switching via improved contact resistance.
AB - We demonstrate a plasmonic Graphene-based electro-absorption modulator heterogeneously integrated in Silicon photonics consuming 110 aJ/bit and being 15 μm compact. We show how the plasmonic metal enables steep switching via improved contact resistance.
UR - http://www.scopus.com/inward/record.url?scp=85052602608&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85052602608&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:85052602608
SN - 9781943580422
T3 - 2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings
BT - 2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2018 Conference on Lasers and Electro-Optics, CLEO 2018
Y2 - 13 May 2018 through 18 May 2018
ER -