110 Attojoule-per-bit Efficient Graphene-based Plasmon Modulator on Silicon

Rubab Amin; Sikandar Khan; Cheol J. Lee; Hamed Dalir; Volker J. Sorger

110 Attojoule-per-bit Efficient Graphene-based Plasmon Modulator on Silicon

Rubab Amin, Sikandar Khan, Cheol J. Lee, Hamed Dalir, Volker J. Sorger

School of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

We demonstrate a plasmonic Graphene-based electro-absorption modulator heterogeneously integrated in Silicon photonics consuming 110 aJ/bit and being 15 μm compact. We show how the plasmonic metal enables steep switching via improved contact resistance.

Original language	English
Title of host publication	2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Print)	9781943580422
Publication status	Published - 2018 Aug 6
Event	2018 Conference on Lasers and Electro-Optics, CLEO 2018 - San Jose, United States Duration: 2018 May 13 → 2018 May 18

Publication series

Name	2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings

Other

Other	2018 Conference on Lasers and Electro-Optics, CLEO 2018
Country/Territory	United States
City	San Jose
Period	18/5/13 → 18/5/18

ASJC Scopus subject areas

Instrumentation
Atomic and Molecular Physics, and Optics

Cite this

110 Attojoule-per-bit Efficient Graphene-based Plasmon Modulator on Silicon. / Amin, Rubab; Khan, Sikandar; Lee, Cheol J. et al.
2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. 8427581 (2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Amin, R, Khan, S, Lee, CJ, Dalir, H & Sorger, VJ 2018, 110 Attojoule-per-bit Efficient Graphene-based Plasmon Modulator on Silicon. in 2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings., 8427581, 2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 2018 Conference on Lasers and Electro-Optics, CLEO 2018, San Jose, United States, 18/5/13.

@inproceedings{c9670fed571b431cbd07eb7c438aec21,

title = "110 Attojoule-per-bit Efficient Graphene-based Plasmon Modulator on Silicon",

abstract = "We demonstrate a plasmonic Graphene-based electro-absorption modulator heterogeneously integrated in Silicon photonics consuming 110 aJ/bit and being 15 μm compact. We show how the plasmonic metal enables steep switching via improved contact resistance.",

author = "Rubab Amin and Sikandar Khan and Lee, {Cheol J.} and Hamed Dalir and Sorger, {Volker J.}",

note = "Publisher Copyright: {\textcopyright} 2018 OSA. Copyright: Copyright 2018 Elsevier B.V., All rights reserved.; 2018 Conference on Lasers and Electro-Optics, CLEO 2018 ; Conference date: 13-05-2018 Through 18-05-2018",

year = "2018",

month = aug,

day = "6",

language = "English",

isbn = "9781943580422",

series = "2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings",

}

TY - GEN

T1 - 110 Attojoule-per-bit Efficient Graphene-based Plasmon Modulator on Silicon

AU - Amin, Rubab

AU - Khan, Sikandar

AU - Lee, Cheol J.

AU - Dalir, Hamed

AU - Sorger, Volker J.

PY - 2018/8/6

Y1 - 2018/8/6

N2 - We demonstrate a plasmonic Graphene-based electro-absorption modulator heterogeneously integrated in Silicon photonics consuming 110 aJ/bit and being 15 μm compact. We show how the plasmonic metal enables steep switching via improved contact resistance.

AB - We demonstrate a plasmonic Graphene-based electro-absorption modulator heterogeneously integrated in Silicon photonics consuming 110 aJ/bit and being 15 μm compact. We show how the plasmonic metal enables steep switching via improved contact resistance.

UR - http://www.scopus.com/inward/record.url?scp=85052602608&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85052602608&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:85052602608

SN - 9781943580422

T3 - 2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings

BT - 2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2018 Conference on Lasers and Electro-Optics, CLEO 2018

Y2 - 13 May 2018 through 18 May 2018

ER -

110 Attojoule-per-bit Efficient Graphene-based Plasmon Modulator on Silicon

Abstract

Publication series

Other

ASJC Scopus subject areas

Other files and links

Fingerprint

Cite this