Abstract
A point-to-point interface with a clock embedded scheme (CES) in Fig. 29.5.1 is generally adopted in an intra-panel interface due to the poor signal integrity of the multi-drop topology, data and clock channel skews and EMI emission from the forwarded clock signal channels. Clock recovery in RX without a reference clock channel is usually carried out using one of two type of data encoding schemes, embedded clock with dummy clock bits [1-2,5] or ensured transition density with data encoding such as 8B10B encoding [3]. However, these two schemes reduce the effective bandwidth because they require over 20% overhead in the data stream. Although highly efficient signaling schemes have been introduced recently in the literature [4] to cope with the physical limitations of the process and channel, it is difficult to adopt these multi-level signaling schemes in intra-panel interfaces where there is a highly resistive channel of Chip-On-Glass and a ground bouncing problem [5] due to different voltage domains (1V and 8V-30V) for serial link and source drivers. This paper introduces a braid clock signaling (BCS) scheme which has the following advantages: 1) clock information without redundant bits; 2) NRZ signal levels for high voltage margin; and 3) low EMI emission with a random data dependent encoding and a spread transition scheme.
Original language | English |
---|---|
Title of host publication | 2017 IEEE International Solid-State Circuits Conference, ISSCC 2017 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 490-491 |
Number of pages | 2 |
Volume | 60 |
ISBN (Electronic) | 9781509037575 |
DOIs | |
Publication status | Published - 2017 Mar 2 |
Event | 64th IEEE International Solid-State Circuits Conference, ISSCC 2017 - San Francisco, United States Duration: 2017 Feb 5 → 2017 Feb 9 |
Other
Other | 64th IEEE International Solid-State Circuits Conference, ISSCC 2017 |
---|---|
Country/Territory | United States |
City | San Francisco |
Period | 17/2/5 → 17/2/9 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering