1.5 MeV electron irradiation damage in β-Ga2O3 vertical rectifiers

Jiancheng Yang, Fan Ren, Stephen J. Pearton, Gwangseok Yang, Jihyun Kim, Akito Kuramata

Research output: Contribution to journalArticlepeer-review

62 Citations (Scopus)

Abstract

Vertical rectifiers fabricated on epi Ga2O3 on bulk β-Ga2O3 were subject to 1.5 MeV electron irradiation at fluences from 1.79 × 1015 to 1.43 × 1016 cm−2 at a fixed beam current of 10−3 A. The electron irradiation caused a reduction in carrier concentration in the epi Ga2O3, with a carrier removal rate of 4.9 cm−1. The 2 kT region of the forward current-voltage characteristics increased due to electron-induced damage, with an increase in diode ideality factor of ∼8% at the highest fluence and a more than 2 order of magnitude increase in on-state resistance. There was a significant reduction in reverse bias current, which scaled with electron fluence. The on/off ratio at −10 V reverse bias voltage was severely degraded by electron irradiation, decreasing from ∼107 in the reference diodes to ∼2 × 104 for the 1.43 × 1016cm−2 fluence. The reverse recovery characteristics showed little change even at the highest fluence, with values in the range of 21-25 ns for all rectifiers.

Original languageEnglish
Article number031208
JournalJournal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
Volume35
Issue number3
DOIs
Publication statusPublished - 2017 May 1

Bibliographical note

Funding Information:
The project was sponsored by the Department of the Defense, Defense Threat Reduction Agency, HDTRA1-17-1-011, monitored by Jacob Calkins. The content of the information does not necessarily reflect the position or the policy of the federal government, and no official endorsement should be inferred. The work at Korea University was supported by a Korea University grant, the LG Innotek-Korea University Nano-Photonics Program, the Korea Institute of Energy Technology Evaluation and Planning (KETEP), and the Ministry of Trade, Industry and Energy (MOTIE) of the Republic of Korea (No. 20163010012140). Part of the work at Tamura was supported by “The research and development project for innovation technique of energy conservation” of the New Energy and Industrial Technology Development Organization (NEDO), Japan. The authors also thank Kohei Sasaki from Tamura Corporation for fruitful discussions.

Publisher Copyright:
© 2017 American Vacuum Society.

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

Fingerprint

Dive into the research topics of '1.5 MeV electron irradiation damage in β-Ga2O3 vertical rectifiers'. Together they form a unique fingerprint.

Cite this