1.5 MeV electron irradiation damage in β-Ga2O3 vertical rectifiers

Jiancheng Yang; Fan Ren; Stephen J. Pearton; Gwangseok Yang; Jihyun Kim; Akito Kuramata

doi:10.1116/1.4983377

1.5 MeV electron irradiation damage in β-Ga₂O₃ vertical rectifiers

Jiancheng Yang, Fan Ren, Stephen J. Pearton, Gwangseok Yang, Jihyun Kim, Akito Kuramata

Research output: Contribution to journal › Article › peer-review

69 Citations (Scopus)

Abstract

Vertical rectifiers fabricated on epi Ga₂O₃ on bulk β-Ga₂O₃ were subject to 1.5 MeV electron irradiation at fluences from 1.79 × 10¹⁵ to 1.43 × 10¹⁶ cm⁻² at a fixed beam current of 10⁻³ A. The electron irradiation caused a reduction in carrier concentration in the epi Ga₂O₃, with a carrier removal rate of 4.9 cm⁻¹. The 2 kT region of the forward current-voltage characteristics increased due to electron-induced damage, with an increase in diode ideality factor of ∼8% at the highest fluence and a more than 2 order of magnitude increase in on-state resistance. There was a significant reduction in reverse bias current, which scaled with electron fluence. The on/off ratio at −10 V reverse bias voltage was severely degraded by electron irradiation, decreasing from ∼10⁷ in the reference diodes to ∼2 × 10⁴ for the 1.43 × 10¹⁶cm⁻² fluence. The reverse recovery characteristics showed little change even at the highest fluence, with values in the range of 21-25 ns for all rectifiers.

Original language	English
Article number	031208
Journal	Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
Volume	35
Issue number	3
DOIs	https://doi.org/10.1116/1.4983377
Publication status	Published - 2017 May 1

Bibliographical note

Funding Information:
The project was sponsored by the Department of the Defense, Defense Threat Reduction Agency, HDTRA1-17-1-011, monitored by Jacob Calkins. The content of the information does not necessarily reflect the position or the policy of the federal government, and no official endorsement should be inferred. The work at Korea University was supported by a Korea University grant, the LG Innotek-Korea University Nano-Photonics Program, the Korea Institute of Energy Technology Evaluation and Planning (KETEP), and the Ministry of Trade, Industry and Energy (MOTIE) of the Republic of Korea (No. 20163010012140). Part of the work at Tamura was supported by “The research and development project for innovation technique of energy conservation” of the New Energy and Industrial Technology Development Organization (NEDO), Japan. The authors also thank Kohei Sasaki from Tamura Corporation for fruitful discussions.

Publisher Copyright:
© 2017 American Vacuum Society.

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Instrumentation
Process Chemistry and Technology
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1116/1.4983377

Cite this

@article{116877ac61e9480b81cde57f51af8e37,

title = "1.5 MeV electron irradiation damage in β-Ga2O3 vertical rectifiers",

abstract = "Vertical rectifiers fabricated on epi Ga2O3 on bulk β-Ga2O3 were subject to 1.5 MeV electron irradiation at fluences from 1.79 × 1015 to 1.43 × 1016 cm−2 at a fixed beam current of 10−3 A. The electron irradiation caused a reduction in carrier concentration in the epi Ga2O3, with a carrier removal rate of 4.9 cm−1. The 2 kT region of the forward current-voltage characteristics increased due to electron-induced damage, with an increase in diode ideality factor of ∼8% at the highest fluence and a more than 2 order of magnitude increase in on-state resistance. There was a significant reduction in reverse bias current, which scaled with electron fluence. The on/off ratio at −10 V reverse bias voltage was severely degraded by electron irradiation, decreasing from ∼107 in the reference diodes to ∼2 × 104 for the 1.43 × 1016cm−2 fluence. The reverse recovery characteristics showed little change even at the highest fluence, with values in the range of 21-25 ns for all rectifiers.",

author = "Jiancheng Yang and Fan Ren and Pearton, {Stephen J.} and Gwangseok Yang and Jihyun Kim and Akito Kuramata",

note = "Funding Information: The project was sponsored by the Department of the Defense, Defense Threat Reduction Agency, HDTRA1-17-1-011, monitored by Jacob Calkins. The content of the information does not necessarily reflect the position or the policy of the federal government, and no official endorsement should be inferred. The work at Korea University was supported by a Korea University grant, the LG Innotek-Korea University Nano-Photonics Program, the Korea Institute of Energy Technology Evaluation and Planning (KETEP), and the Ministry of Trade, Industry and Energy (MOTIE) of the Republic of Korea (No. 20163010012140). Part of the work at Tamura was supported by “The research and development project for innovation technique of energy conservation” of the New Energy and Industrial Technology Development Organization (NEDO), Japan. The authors also thank Kohei Sasaki from Tamura Corporation for fruitful discussions. Publisher Copyright: {\textcopyright} 2017 American Vacuum Society.",

year = "2017",

month = may,

day = "1",

doi = "10.1116/1.4983377",

language = "English",

volume = "35",

journal = "Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics",

issn = "2166-2746",

publisher = "AVS Science and Technology Society",

number = "3",

}

TY - JOUR

T1 - 1.5 MeV electron irradiation damage in β-Ga2O3 vertical rectifiers

AU - Yang, Jiancheng

AU - Ren, Fan

AU - Pearton, Stephen J.

AU - Yang, Gwangseok

AU - Kim, Jihyun

AU - Kuramata, Akito

N1 - Funding Information: The project was sponsored by the Department of the Defense, Defense Threat Reduction Agency, HDTRA1-17-1-011, monitored by Jacob Calkins. The content of the information does not necessarily reflect the position or the policy of the federal government, and no official endorsement should be inferred. The work at Korea University was supported by a Korea University grant, the LG Innotek-Korea University Nano-Photonics Program, the Korea Institute of Energy Technology Evaluation and Planning (KETEP), and the Ministry of Trade, Industry and Energy (MOTIE) of the Republic of Korea (No. 20163010012140). Part of the work at Tamura was supported by “The research and development project for innovation technique of energy conservation” of the New Energy and Industrial Technology Development Organization (NEDO), Japan. The authors also thank Kohei Sasaki from Tamura Corporation for fruitful discussions. Publisher Copyright: © 2017 American Vacuum Society.

PY - 2017/5/1

Y1 - 2017/5/1

N2 - Vertical rectifiers fabricated on epi Ga2O3 on bulk β-Ga2O3 were subject to 1.5 MeV electron irradiation at fluences from 1.79 × 1015 to 1.43 × 1016 cm−2 at a fixed beam current of 10−3 A. The electron irradiation caused a reduction in carrier concentration in the epi Ga2O3, with a carrier removal rate of 4.9 cm−1. The 2 kT region of the forward current-voltage characteristics increased due to electron-induced damage, with an increase in diode ideality factor of ∼8% at the highest fluence and a more than 2 order of magnitude increase in on-state resistance. There was a significant reduction in reverse bias current, which scaled with electron fluence. The on/off ratio at −10 V reverse bias voltage was severely degraded by electron irradiation, decreasing from ∼107 in the reference diodes to ∼2 × 104 for the 1.43 × 1016cm−2 fluence. The reverse recovery characteristics showed little change even at the highest fluence, with values in the range of 21-25 ns for all rectifiers.

AB - Vertical rectifiers fabricated on epi Ga2O3 on bulk β-Ga2O3 were subject to 1.5 MeV electron irradiation at fluences from 1.79 × 1015 to 1.43 × 1016 cm−2 at a fixed beam current of 10−3 A. The electron irradiation caused a reduction in carrier concentration in the epi Ga2O3, with a carrier removal rate of 4.9 cm−1. The 2 kT region of the forward current-voltage characteristics increased due to electron-induced damage, with an increase in diode ideality factor of ∼8% at the highest fluence and a more than 2 order of magnitude increase in on-state resistance. There was a significant reduction in reverse bias current, which scaled with electron fluence. The on/off ratio at −10 V reverse bias voltage was severely degraded by electron irradiation, decreasing from ∼107 in the reference diodes to ∼2 × 104 for the 1.43 × 1016cm−2 fluence. The reverse recovery characteristics showed little change even at the highest fluence, with values in the range of 21-25 ns for all rectifiers.

UR - http://www.scopus.com/inward/record.url?scp=85018882376&partnerID=8YFLogxK

U2 - 10.1116/1.4983377

DO - 10.1116/1.4983377

M3 - Article

AN - SCOPUS:85018882376

SN - 2166-2746

VL - 35

JO - Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics

JF - Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics

IS - 3

M1 - 031208

ER -