15 MeV proton damage in NiO/ β-Ga₂O₃vertical rectifiers

Keyphrases

• Ga2O3 100%
• MeV Protons 100%
• Carrier Density 100%
• Proton Damage 100%
• Rectifier 100%
• Forward Current 50%
• Current Density 50%
• Annealing 50%
• Carrier Mobility 50%
• Order of Magnitude 50%
• Subsequent Annealing 50%
• Cm(III) 50%
• Heterojunction 50%
• Proton Irradiation 50%
• Carrier Removal 50%
• Schottky Rectifier 50%
• Reverse Breakdown Voltage 50%
• Reverse Leakage Current 50%
• Drift Region 50%
• Reverse Leakage 50%
• Low Fluence 50%
• High Fluence 50%
• Vertical Geometry 50%
• On-state Resistance 50%

Material Science

• Carrier Concentration 100%
• Density 50%
• Heterojunction 50%
• Carrier Mobility 50%
• Proton Irradiation 50%