150-GHz 28-nm CMOS Reflection-Type Phase Shifter Design Suitable for Low-Q Varactor

Yangwoo Kim; Junghyun Lee; Moonil Kim

doi:10.3390/electronics14214280

150-GHz 28-nm CMOS Reflection-Type Phase Shifter Design Suitable for Low-Q Varactor

Yangwoo Kim
, Junghyun Lee
, Moonil Kim^*

^*Corresponding author for this work

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

This paper presents the design and implementation of a D-band CMOS phase shifter based on a parallel reflective-load topology. Two phase-shifting architectures are explored, namely a 360° continuously tunable phase shifter and a 180° phase shifter combined with a phase inverter, enabling full 360° phase coverage. The circuit was simplified, and the number of bias lines was minimized to facilitate future array circuit implementation. In addition, a serial peripheral interface (SPI) circuit is implemented to simplify bias control and reduce the number of external connections during array chip packaging.

Original language	English
Article number	4280
Journal	Electronics (Switzerland)
Volume	14
Issue number	21
DOIs	https://doi.org/10.3390/electronics14214280
Publication status	Published - 2025 Nov

Bibliographical note

Publisher Copyright:
© 2025 by the authors.

Keywords

CMOS
D-band
reflective type phase shifter

ASJC Scopus subject areas

Control and Systems Engineering
Signal Processing
Hardware and Architecture
Computer Networks and Communications
Electrical and Electronic Engineering

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10.3390/electronics14214280

Cite this

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title = "150-GHz 28-nm CMOS Reflection-Type Phase Shifter Design Suitable for Low-Q Varactor",

abstract = "This paper presents the design and implementation of a D-band CMOS phase shifter based on a parallel reflective-load topology. Two phase-shifting architectures are explored, namely a 360° continuously tunable phase shifter and a 180° phase shifter combined with a phase inverter, enabling full 360° phase coverage. The circuit was simplified, and the number of bias lines was minimized to facilitate future array circuit implementation. In addition, a serial peripheral interface (SPI) circuit is implemented to simplify bias control and reduce the number of external connections during array chip packaging.",

keywords = "CMOS, D-band, reflective type phase shifter",

author = "Yangwoo Kim and Junghyun Lee and Moonil Kim",

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Y1 - 2025/11

N2 - This paper presents the design and implementation of a D-band CMOS phase shifter based on a parallel reflective-load topology. Two phase-shifting architectures are explored, namely a 360° continuously tunable phase shifter and a 180° phase shifter combined with a phase inverter, enabling full 360° phase coverage. The circuit was simplified, and the number of bias lines was minimized to facilitate future array circuit implementation. In addition, a serial peripheral interface (SPI) circuit is implemented to simplify bias control and reduce the number of external connections during array chip packaging.

AB - This paper presents the design and implementation of a D-band CMOS phase shifter based on a parallel reflective-load topology. Two phase-shifting architectures are explored, namely a 360° continuously tunable phase shifter and a 180° phase shifter combined with a phase inverter, enabling full 360° phase coverage. The circuit was simplified, and the number of bias lines was minimized to facilitate future array circuit implementation. In addition, a serial peripheral interface (SPI) circuit is implemented to simplify bias control and reduce the number of external connections during array chip packaging.

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KW - D-band

KW - reflective type phase shifter

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ER -

150-GHz 28-nm CMOS Reflection-Type Phase Shifter Design Suitable for Low-Q Varactor

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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