155 Mbit/s transmission using ASE-injected Fabry-Perot laser diode in WDM-PON over 70°C temperature range

D. J. Shin; D. K. Jung; J. K. Lee; J. H. Lee; Y. H. Choi; Y. C. Bang; H. S. Shin; J. Lee; S. T. Hwang; Y. J. Oh

doi:10.1049/el:20030850

155 Mbit/s transmission using ASE-injected Fabry-Perot laser diode in WDM-PON over 70°C temperature range

D. J. Shin, D. K. Jung, J. K. Lee, J. H. Lee, Y. H. Choi, Y. C. Bang, H. S. Shin, J. Lee, S. T. Hwang, Y. J. Oh

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Thermal reliability of an uncooled Fabry-Perot laser diode (F-PLD) wavelength-locked to spectrum-sliced amplified spontaneous emission (ASE) as a source for wavelength division multiplexed-passive optical networks (WDM-PONs) is presented. An F-PLD with narrow mode spacing and asymmetric facet reflectivity relieved temperature dependency of transmission and power requirement of ASE injection. The chip temperature range of error-free transmission at 155 Mbit/s extended over 70°C with -22 dBm ASE injection.

Original language	English
Pages (from-to)	1331-1332
Number of pages	2
Journal	Electronics Letters
Volume	39
Issue number	18
DOIs	https://doi.org/10.1049/el:20030850
Publication status	Published - 2003 Sept 4
Externally published	Yes

ASJC Scopus subject areas

Electrical and Electronic Engineering

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@article{18c8a771ec274379ada787f33259fc83,

title = "155 Mbit/s transmission using ASE-injected Fabry-Perot laser diode in WDM-PON over 70°C temperature range",

abstract = "Thermal reliability of an uncooled Fabry-Perot laser diode (F-PLD) wavelength-locked to spectrum-sliced amplified spontaneous emission (ASE) as a source for wavelength division multiplexed-passive optical networks (WDM-PONs) is presented. An F-PLD with narrow mode spacing and asymmetric facet reflectivity relieved temperature dependency of transmission and power requirement of ASE injection. The chip temperature range of error-free transmission at 155 Mbit/s extended over 70°C with -22 dBm ASE injection.",

author = "Shin, {D. J.} and Jung, {D. K.} and Lee, {J. K.} and Lee, {J. H.} and Choi, {Y. H.} and Bang, {Y. C.} and Shin, {H. S.} and J. Lee and Hwang, {S. T.} and Oh, {Y. J.}",

year = "2003",

month = sep,

day = "4",

doi = "10.1049/el:20030850",

language = "English",

volume = "39",

pages = "1331--1332",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

number = "18",

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TY - JOUR

T1 - 155 Mbit/s transmission using ASE-injected Fabry-Perot laser diode in WDM-PON over 70°C temperature range

AU - Shin, D. J.

AU - Jung, D. K.

AU - Lee, J. K.

AU - Lee, J. H.

AU - Choi, Y. H.

AU - Bang, Y. C.

AU - Shin, H. S.

AU - Lee, J.

AU - Hwang, S. T.

AU - Oh, Y. J.

PY - 2003/9/4

Y1 - 2003/9/4

N2 - Thermal reliability of an uncooled Fabry-Perot laser diode (F-PLD) wavelength-locked to spectrum-sliced amplified spontaneous emission (ASE) as a source for wavelength division multiplexed-passive optical networks (WDM-PONs) is presented. An F-PLD with narrow mode spacing and asymmetric facet reflectivity relieved temperature dependency of transmission and power requirement of ASE injection. The chip temperature range of error-free transmission at 155 Mbit/s extended over 70°C with -22 dBm ASE injection.

AB - Thermal reliability of an uncooled Fabry-Perot laser diode (F-PLD) wavelength-locked to spectrum-sliced amplified spontaneous emission (ASE) as a source for wavelength division multiplexed-passive optical networks (WDM-PONs) is presented. An F-PLD with narrow mode spacing and asymmetric facet reflectivity relieved temperature dependency of transmission and power requirement of ASE injection. The chip temperature range of error-free transmission at 155 Mbit/s extended over 70°C with -22 dBm ASE injection.

UR - http://www.scopus.com/inward/record.url?scp=0141717793&partnerID=8YFLogxK

U2 - 10.1049/el:20030850

DO - 10.1049/el:20030850

M3 - Article

AN - SCOPUS:0141717793

SN - 0013-5194

VL - 39

SP - 1331

EP - 1332

JO - Electronics Letters

JF - Electronics Letters

IS - 18

ER -

155 Mbit/s transmission using ASE-injected Fabry-Perot laser diode in WDM-PON over 70°C temperature range

Abstract

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