160-A bulk GaN Schottky diode array

K. H. Baik, Y. Irokawa, Jihyun Kim, J. R. LaRoche, F. Ren, S. S. Park, Y. J. Park, S. J. Pearton

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)


A study was performed on the 160-A bulk gallium nitride (GaN) Schottky diode array. The rectifiers fabricated on the freestanding GaN showed a strong dependence of reverse breakdown on contact diameter. It was found that a high total forward output current and a low forward turn-on voltage were obtained by interconnecting the output of many smaller rectifiers.

Original languageEnglish
Pages (from-to)3192-3194
Number of pages3
JournalApplied Physics Letters
Issue number15
Publication statusPublished - 2003 Oct 13
Externally publishedYes

Bibliographical note

Copyright 2008 Elsevier B.V., All rights reserved.

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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