160-A bulk GaN Schottky diode array

K. H. Baik; Y. Irokawa; Jihyun Kim; J. R. LaRoche; F. Ren; S. S. Park; Y. J. Park; S. J. Pearton

doi:10.1063/1.1618022

160-A bulk GaN Schottky diode array

K. H. Baik^*
, Y. Irokawa
, Jihyun Kim
, J. R. LaRoche
, F. Ren
, S. S. Park
, Y. J. Park
, S. J. Pearton

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

A study was performed on the 160-A bulk gallium nitride (GaN) Schottky diode array. The rectifiers fabricated on the freestanding GaN showed a strong dependence of reverse breakdown on contact diameter. It was found that a high total forward output current and a low forward turn-on voltage were obtained by interconnecting the output of many smaller rectifiers.

Original language	English
Pages (from-to)	3192-3194
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	15
DOIs	https://doi.org/10.1063/1.1618022
Publication status	Published - 2003 Oct 13
Externally published	Yes

Bibliographical note

Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1618022

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title = "160-A bulk GaN Schottky diode array",

abstract = "A study was performed on the 160-A bulk gallium nitride (GaN) Schottky diode array. The rectifiers fabricated on the freestanding GaN showed a strong dependence of reverse breakdown on contact diameter. It was found that a high total forward output current and a low forward turn-on voltage were obtained by interconnecting the output of many smaller rectifiers.",

author = "Baik, \{K. H.\} and Y. Irokawa and Jihyun Kim and LaRoche, \{J. R.\} and F. Ren and Park, \{S. S.\} and Park, \{Y. J.\} and Pearton, \{S. J.\}",

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AU - Baik, K. H.

AU - Irokawa, Y.

AU - Kim, Jihyun

AU - LaRoche, J. R.

AU - Ren, F.

AU - Park, S. S.

AU - Park, Y. J.

AU - Pearton, S. J.

PY - 2003/10/13

Y1 - 2003/10/13

N2 - A study was performed on the 160-A bulk gallium nitride (GaN) Schottky diode array. The rectifiers fabricated on the freestanding GaN showed a strong dependence of reverse breakdown on contact diameter. It was found that a high total forward output current and a low forward turn-on voltage were obtained by interconnecting the output of many smaller rectifiers.

AB - A study was performed on the 160-A bulk gallium nitride (GaN) Schottky diode array. The rectifiers fabricated on the freestanding GaN showed a strong dependence of reverse breakdown on contact diameter. It was found that a high total forward output current and a low forward turn-on voltage were obtained by interconnecting the output of many smaller rectifiers.

UR - https://www.scopus.com/pages/publications/0242348680

U2 - 10.1063/1.1618022

DO - 10.1063/1.1618022

M3 - Article

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SN - 0003-6951

VL - 83

SP - 3192

EP - 3194

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

ER -

160-A bulk GaN Schottky diode array

Abstract

Bibliographical note

ASJC Scopus subject areas

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