20-Gb/s ON-OFF-Keying Modulators Using 0.25-um InP DHBT Switches at 290 GHz

C. Yi; S. H. Choi; M. Urteaga; M. Kim

doi:10.1109/LMWC.2019.2908878

20-Gb/s ON-OFF-Keying Modulators Using 0.25-um InP DHBT Switches at 290 GHz

C. Yi, S. H. Choi, M. Urteaga, M. Kim

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Performances of high-speed switches operating as terahertz on-off-keying (OOK) modulators are reported. Two types of switches, a passive shunt switch and an amplifier switch, are fabricated using 0.25- \mu \text{m} InP double heterojuction bipolar transistor (DHBT) technology. Small-signal tests show that the amplifier switch possesses superior on-off ratio, but the passive switch has broader bandwidth and smaller group delay ripples. A modulator test setup is built with 20-dB path loss between the transmitter and the receiver. The results indicate that carrier power levels of 14 dBm for the shunt switch and 8 dBm for the amplifier switch are required for 20-Gb/s OOK modulation with bit error rate (BER) of 10^-2 at 290 GHz.

Original language	English
Article number	8691541
Pages (from-to)	360-362
Number of pages	3
Journal	IEEE Microwave and Wireless Components Letters
Volume	29
Issue number	5
DOIs	https://doi.org/10.1109/LMWC.2019.2908878
Publication status	Published - 2019 May

Bibliographical note

Publisher Copyright:
© 2001-2012 IEEE.

Keywords

InP double heterojuction bipolar transistor (DHBT)
terahertz on-off -keying (OOK) modulator
terahertz switch

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/LMWC.2019.2908878

Cite this

@article{dd23a3a647754ffea50d267a9788f6f7,

title = "20-Gb/s ON-OFF-Keying Modulators Using 0.25-um InP DHBT Switches at 290 GHz",

abstract = "Performances of high-speed switches operating as terahertz on-off-keying (OOK) modulators are reported. Two types of switches, a passive shunt switch and an amplifier switch, are fabricated using 0.25- \mu \text{m} InP double heterojuction bipolar transistor (DHBT) technology. Small-signal tests show that the amplifier switch possesses superior on-off ratio, but the passive switch has broader bandwidth and smaller group delay ripples. A modulator test setup is built with 20-dB path loss between the transmitter and the receiver. The results indicate that carrier power levels of 14 dBm for the shunt switch and 8 dBm for the amplifier switch are required for 20-Gb/s OOK modulation with bit error rate (BER) of 10-2 at 290 GHz.",

keywords = "InP double heterojuction bipolar transistor (DHBT), terahertz on-off -keying (OOK) modulator, terahertz switch",

author = "C. Yi and Choi, {S. H.} and M. Urteaga and M. Kim",

note = "Publisher Copyright: {\textcopyright} 2001-2012 IEEE.",

year = "2019",

month = may,

doi = "10.1109/LMWC.2019.2908878",

language = "English",

volume = "29",

pages = "360--362",

journal = "IEEE Microwave and Wireless Components Letters",

issn = "1531-1309",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "5",

}

TY - JOUR

T1 - 20-Gb/s ON-OFF-Keying Modulators Using 0.25-um InP DHBT Switches at 290 GHz

AU - Yi, C.

AU - Choi, S. H.

AU - Urteaga, M.

AU - Kim, M.

PY - 2019/5

Y1 - 2019/5

N2 - Performances of high-speed switches operating as terahertz on-off-keying (OOK) modulators are reported. Two types of switches, a passive shunt switch and an amplifier switch, are fabricated using 0.25- \mu \text{m} InP double heterojuction bipolar transistor (DHBT) technology. Small-signal tests show that the amplifier switch possesses superior on-off ratio, but the passive switch has broader bandwidth and smaller group delay ripples. A modulator test setup is built with 20-dB path loss between the transmitter and the receiver. The results indicate that carrier power levels of 14 dBm for the shunt switch and 8 dBm for the amplifier switch are required for 20-Gb/s OOK modulation with bit error rate (BER) of 10-2 at 290 GHz.

AB - Performances of high-speed switches operating as terahertz on-off-keying (OOK) modulators are reported. Two types of switches, a passive shunt switch and an amplifier switch, are fabricated using 0.25- \mu \text{m} InP double heterojuction bipolar transistor (DHBT) technology. Small-signal tests show that the amplifier switch possesses superior on-off ratio, but the passive switch has broader bandwidth and smaller group delay ripples. A modulator test setup is built with 20-dB path loss between the transmitter and the receiver. The results indicate that carrier power levels of 14 dBm for the shunt switch and 8 dBm for the amplifier switch are required for 20-Gb/s OOK modulation with bit error rate (BER) of 10-2 at 290 GHz.

KW - InP double heterojuction bipolar transistor (DHBT)

KW - terahertz on-off -keying (OOK) modulator

KW - terahertz switch

UR - http://www.scopus.com/inward/record.url?scp=85065675989&partnerID=8YFLogxK

U2 - 10.1109/LMWC.2019.2908878

DO - 10.1109/LMWC.2019.2908878

M3 - Article

AN - SCOPUS:85065675989

SN - 1531-1309

VL - 29

SP - 360

EP - 362

JO - IEEE Microwave and Wireless Components Letters

JF - IEEE Microwave and Wireless Components Letters

IS - 5

M1 - 8691541

ER -

20-Gb/s ON-OFF-Keying Modulators Using 0.25-um InP DHBT Switches at 290 GHz

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

Access to Document

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