20-Gb/s ON-OFF-Keying Modulators Using 0.25-um InP DHBT Switches at 290 GHz

C. Yi, S. H. Choi, M. Urteaga, M. Kim

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)


Performances of high-speed switches operating as terahertz on-off-keying (OOK) modulators are reported. Two types of switches, a passive shunt switch and an amplifier switch, are fabricated using 0.25- \mu \text{m} InP double heterojuction bipolar transistor (DHBT) technology. Small-signal tests show that the amplifier switch possesses superior on-off ratio, but the passive switch has broader bandwidth and smaller group delay ripples. A modulator test setup is built with 20-dB path loss between the transmitter and the receiver. The results indicate that carrier power levels of 14 dBm for the shunt switch and 8 dBm for the amplifier switch are required for 20-Gb/s OOK modulation with bit error rate (BER) of 10-2 at 290 GHz.

Original languageEnglish
Article number8691541
Pages (from-to)360-362
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Issue number5
Publication statusPublished - 2019 May

Bibliographical note

Publisher Copyright:
© 2001-2012 IEEE.


  • InP double heterojuction bipolar transistor (DHBT)
  • terahertz on-off -keying (OOK) modulator
  • terahertz switch

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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