260-GHz differential amplifier in SiGe heterojunction bipolar transistor technology

D. Yoon; M. G. Seo; K. Song; M. Kaynak; B. Tillack; J. S. Rieh

doi:10.1049/el.2016.3882

260-GHz differential amplifier in SiGe heterojunction bipolar transistor technology

D. Yoon, M. G. Seo, K. Song, M. Kaynak, B. Tillack, J. S. Rieh

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

A 260-GHz amplifier in a SiGe heterojunction bipolar transistor (HBT) technology is reported. It is based on three-stage differential cascode topology and adopts a passive shunt transistor pair at the output of each amplifying stage to relax instability caused by parasitic base inductance of amplifying transistor pair. The instability of the amplifier can be mitigated by tuning the base bias voltage of the shunt transistor pair. Peak gain of the amplifier was measured as 15 dB at 260 GHz. DC power dissipation is 112 mW. The chip occupies 300 × 160 μm² excluding Baluns and probing pads.

Original language	English
Pages (from-to)	194-196
Number of pages	3
Journal	Electronics Letters
Volume	53
Issue number	3
DOIs	https://doi.org/10.1049/el.2016.3882
Publication status	Published - 2017 Feb 2

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el.2016.3882

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@article{9c37fa012e7d4c3bb42238e12052bc90,

title = "260-GHz differential amplifier in SiGe heterojunction bipolar transistor technology",

abstract = "A 260-GHz amplifier in a SiGe heterojunction bipolar transistor (HBT) technology is reported. It is based on three-stage differential cascode topology and adopts a passive shunt transistor pair at the output of each amplifying stage to relax instability caused by parasitic base inductance of amplifying transistor pair. The instability of the amplifier can be mitigated by tuning the base bias voltage of the shunt transistor pair. Peak gain of the amplifier was measured as 15 dB at 260 GHz. DC power dissipation is 112 mW. The chip occupies 300 × 160 μm2 excluding Baluns and probing pads.",

author = "D. Yoon and Seo, {M. G.} and K. Song and M. Kaynak and B. Tillack and Rieh, {J. S.}",

year = "2017",

month = feb,

day = "2",

doi = "10.1049/el.2016.3882",

language = "English",

volume = "53",

pages = "194--196",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

number = "3",

}

TY - JOUR

T1 - 260-GHz differential amplifier in SiGe heterojunction bipolar transistor technology

AU - Yoon, D.

AU - Seo, M. G.

AU - Song, K.

AU - Kaynak, M.

AU - Tillack, B.

AU - Rieh, J. S.

PY - 2017/2/2

Y1 - 2017/2/2

N2 - A 260-GHz amplifier in a SiGe heterojunction bipolar transistor (HBT) technology is reported. It is based on three-stage differential cascode topology and adopts a passive shunt transistor pair at the output of each amplifying stage to relax instability caused by parasitic base inductance of amplifying transistor pair. The instability of the amplifier can be mitigated by tuning the base bias voltage of the shunt transistor pair. Peak gain of the amplifier was measured as 15 dB at 260 GHz. DC power dissipation is 112 mW. The chip occupies 300 × 160 μm2 excluding Baluns and probing pads.

AB - A 260-GHz amplifier in a SiGe heterojunction bipolar transistor (HBT) technology is reported. It is based on three-stage differential cascode topology and adopts a passive shunt transistor pair at the output of each amplifying stage to relax instability caused by parasitic base inductance of amplifying transistor pair. The instability of the amplifier can be mitigated by tuning the base bias voltage of the shunt transistor pair. Peak gain of the amplifier was measured as 15 dB at 260 GHz. DC power dissipation is 112 mW. The chip occupies 300 × 160 μm2 excluding Baluns and probing pads.

UR - http://www.scopus.com/inward/record.url?scp=85011890611&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85011890611&partnerID=8YFLogxK

U2 - 10.1049/el.2016.3882

DO - 10.1049/el.2016.3882

M3 - Article

AN - SCOPUS:85011890611

SN - 0013-5194

VL - 53

SP - 194

EP - 196

JO - Electronics Letters

JF - Electronics Letters

IS - 3

ER -

260-GHz differential amplifier in SiGe heterojunction bipolar transistor technology

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