2D Amorphous GaOX Gate Dielectric for β-Ga2O3 Field-Effect Transistors

Sanghyun Moon, Donggyu Lee, Jehwan Park, Jihyun Kim

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


Appropriate gate dielectrics must be identified to fabricate metal-insulator-semiconductor field-effect transistors (MISFETs); however, this has been challenging for compound semiconductors owing to the absence of high-quality native oxides. This study uses the liquid-gallium squeezing technique to fabricate 2D amorphous gallium oxide (GaOX) with a high dielectric constant, where its thickness is precisely controlled at the atomic scale (monolayer, ∼4.5 nm; bilayer, ∼8.5 nm). Beta-phase gallium oxide (β-Ga2O3) with an ultrawide energy bandgap (4.5-4.9 eV) has emerged as a next-generation power semiconductor material and is presented here as the channel material. The 2D amorphous GaOX dielectric is combined with a β-Ga2O3 conducting nanolayer, and the resulting β-Ga2O3 MISFET is stable up to 250 °C. The 2D amorphous GaOX is oxygen-deficient, and a high-quality interface with excellent uniformity and scalability forms between the 2D amorphous GaOX and β-Ga2O3. The fabricated MISFET exhibits a wide gate-voltage swing of approximately +5 V, a high current on/off ratio, moderate field-effect carrier mobility, and a decent three-terminal breakdown voltage (∼138 V). The carrier transport of the Ni/GaOX/β-Ga2O3 metal-insulator-semiconductor (MIS) structure displays a combination of Schottky emission and Fowler-Nordheim (F-N) tunneling in the high-gate-bias region at 25 °C, whereas at elevated temperatures it shows Schottky emission and F-N tunneling in the low- and high-gate-bias regions, respectively. This study demonstrates that a 2D GaOX gate dielectric layer can be produced and incorporated into an active channel layer to form an MIS structure at room temperature (∼25 °C), which enables the facile fabrication of MISFET devices.

Original languageEnglish
Pages (from-to)37687-37695
Number of pages9
JournalACS Applied Materials and Interfaces
Issue number31
Publication statusPublished - 2023 Aug 9
Externally publishedYes

Bibliographical note

Funding Information:
This research was financially supported by the New Faculty Startup Fund from Seoul National University, the National Research Foundation of Korea (2020M3H4A3081799), the Korea Institute for Advancement of Technology (The Competency Development Program for Industry Specialist; P0012451), and the Korea Research Institute for Defense Technology Planning and Advancement (Defense Acquisition Program Administration (DAPA); KRIT-CR-22-046).

Publisher Copyright:
© 2023 American Chemical Society.


  • field-effect transistors
  • gallium oxide
  • gate dielectric
  • two-dimensional materials
  • wide-bandgap semiconductors

ASJC Scopus subject areas

  • General Materials Science


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