TY - JOUR
T1 - 3 MeV electron irradiation-induced defects in CuInSe2 thin films
AU - Lee, Hae Seok
AU - Okada, Hiroshi
AU - Wakahara, Akihiro
AU - Ohshima, Takeshi
AU - Itoh, Hisayoshi
AU - Kawakita, Shirou
AU - Imaizumi, Mitsuru
AU - Matsuda, Sumio
AU - Yoshida, Akira
PY - 2003/9
Y1 - 2003/9
N2 - 3MeV electron irradiation induced-defects in CuInSe2 (CIS) thin films have been investigated. Both of the carrier concentration and Hall mobility were decreased as the electron fluence exceeded 1 × 10 17cm-2. The carrier removal rate was estimated to be about 1 cm-1. To evaluate electron irradiation-induced defect, the electrical properties of CIS thin films before and after irradiation were investigated between 80 and 300 K. From the temperature dependence of the carrier concentration in non-irradiated thin films, we obtained ND = 1.8 × 1017cm-3, NA = 1.7 × 10 16cm-3 and ED = 18meV from the SALS fitting to the experimental data on the basis of the charge balance equation. After irradiation, a new defect level was formed, and NT0 = 1.4 ×10 17cm-3 and ET = 54meV were also obtained from the same procedure. From the temperature dependence of Hall mobility, the ionized impurity density was discussed before and after the irradiation.
AB - 3MeV electron irradiation induced-defects in CuInSe2 (CIS) thin films have been investigated. Both of the carrier concentration and Hall mobility were decreased as the electron fluence exceeded 1 × 10 17cm-2. The carrier removal rate was estimated to be about 1 cm-1. To evaluate electron irradiation-induced defect, the electrical properties of CIS thin films before and after irradiation were investigated between 80 and 300 K. From the temperature dependence of the carrier concentration in non-irradiated thin films, we obtained ND = 1.8 × 1017cm-3, NA = 1.7 × 10 16cm-3 and ED = 18meV from the SALS fitting to the experimental data on the basis of the charge balance equation. After irradiation, a new defect level was formed, and NT0 = 1.4 ×10 17cm-3 and ET = 54meV were also obtained from the same procedure. From the temperature dependence of Hall mobility, the ionized impurity density was discussed before and after the irradiation.
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U2 - 10.1016/S0022-3697(03)00109-4
DO - 10.1016/S0022-3697(03)00109-4
M3 - Article
AN - SCOPUS:0043239035
SN - 0022-3697
VL - 64
SP - 1887
EP - 1890
JO - Journal of Physics and Chemistry of Solids
JF - Journal of Physics and Chemistry of Solids
IS - 9-10
ER -