300 GHz InP HBT amplifier with 10 mW output power

H. G. Yu; S. H. Choi; S. Jeon; M. Kim

doi:10.1049/el.2013.3288

300 GHz InP HBT amplifier with 10 mW output power

H. G. Yu, S. H. Choi, S. Jeon, M. Kim

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

A high-power terahertz solid-state amplifier fabricated using 0.25 μ m InP heterojunction bipolar transistor (HBT) technology is reported. This amplifier utilies a novel defective-ground four-way balun to combine differential amplifier chains for a total output device periphery of 40 μ m. A significant amount of power of ~10 mW is obtained at 305 GHz with better than 20 dB small-signal gain.

Original language	English
Pages (from-to)	377-379
Number of pages	3
Journal	Electronics Letters
Volume	50
Issue number	5
DOIs	https://doi.org/10.1049/el.2013.3288
Publication status	Published - 2014 Feb 27

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el.2013.3288

Cite this

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title = "300 GHz InP HBT amplifier with 10 mW output power",

abstract = "A high-power terahertz solid-state amplifier fabricated using 0.25 μ m InP heterojunction bipolar transistor (HBT) technology is reported. This amplifier utilies a novel defective-ground four-way balun to combine differential amplifier chains for a total output device periphery of 40 μ m. A significant amount of power of ~10 mW is obtained at 305 GHz with better than 20 dB small-signal gain.",

author = "Yu, {H. G.} and Choi, {S. H.} and S. Jeon and M. Kim",

year = "2014",

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AU - Yu, H. G.

AU - Choi, S. H.

AU - Jeon, S.

AU - Kim, M.

PY - 2014/2/27

Y1 - 2014/2/27

N2 - A high-power terahertz solid-state amplifier fabricated using 0.25 μ m InP heterojunction bipolar transistor (HBT) technology is reported. This amplifier utilies a novel defective-ground four-way balun to combine differential amplifier chains for a total output device periphery of 40 μ m. A significant amount of power of ~10 mW is obtained at 305 GHz with better than 20 dB small-signal gain.

AB - A high-power terahertz solid-state amplifier fabricated using 0.25 μ m InP heterojunction bipolar transistor (HBT) technology is reported. This amplifier utilies a novel defective-ground four-way balun to combine differential amplifier chains for a total output device periphery of 40 μ m. A significant amount of power of ~10 mW is obtained at 305 GHz with better than 20 dB small-signal gain.

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DO - 10.1049/el.2013.3288

M3 - Article

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VL - 50

SP - 377

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JO - Electronics Letters

JF - Electronics Letters

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ER -

300 GHz InP HBT amplifier with 10 mW output power

Abstract

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