Abstract
A high-power terahertz solid-state amplifier fabricated using 0.25 μ m InP heterojunction bipolar transistor (HBT) technology is reported. This amplifier utilies a novel defective-ground four-way balun to combine differential amplifier chains for a total output device periphery of 40 μ m. A significant amount of power of ~10 mW is obtained at 305 GHz with better than 20 dB small-signal gain.
Original language | English |
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Pages (from-to) | 377-379 |
Number of pages | 3 |
Journal | Electronics Letters |
Volume | 50 |
Issue number | 5 |
DOIs | |
Publication status | Published - 2014 Feb 27 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering