300-GHz InP HBT oscillators based on common-base cross-coupled topology

Jongwon Yun, Daekeun Yoon, Hyunchul Kim, Jae Sung Rieh

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48 Citations (Scopus)


Two fundamental-mode oscillators operating around 300 GHz, a fixed-frequency oscillator and a voltage-controlled oscillator (VCO), have been developed in this work based on a 250-nm InP heterojunction bipolar transistor (HBT) technology. Both oscillators adopted the common-base configuration for the cross-coupled oscillator core, providing higher oscillation frequency compared to the conventional common-emitter cross-coupled topology. The fabricated fixed-frequency oscillator and the VCO exhibited oscillation frequency of 305.8 GHz and 298.1-316.1 GHz (18-GHz tuning range) at dc power dissipation of 87.4 and 88.1 mW, respectively. The phase noise of the fixed-frequency oscillator was measured to be -116.5~\hbox {dBc/Hz} at 10 MHz offset. The peak output power of 5.3 dBm (3.8% dc-to-RF efficiency) and 4.7 dBm (3.2% dc-to-RF efficiency) were respectively achieved for the two oscillators, which are the highest reported power for a transistor-based single oscillator beyond 200 GHz.

Original languageEnglish
Article number6949166
Pages (from-to)3053-3064
Number of pages12
JournalIEEE Transactions on Microwave Theory and Techniques
Issue number12
Publication statusPublished - 2014 Dec 1

Bibliographical note

Publisher Copyright:
© 1963-2012 IEEE.


  • Frequency control
  • heterojunction bipolar transistors (HBT)
  • voltage-controlled oscillators (VCO)

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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