@inproceedings{68a33b6392604914966cca9b5973af8d,
title = "300 GHz six-stage differential-mode amplifier",
abstract = "A 300 GHz amplifier is fabricated using indium-phosphide (InP) double-heterojunction bipolar transistor (DHBT) technology. T he cascade chain in the amplifier contalns six unit cells each containing a pair of common-base DHBTs in differential configuration. A total of three signal lines run through to the unit-cell to obtain the differential-mode amplifier gain and provide proper dc bias. Measured results show the peak gain of 17.3 dB at 290 GHz with 10-dB gain-bandwidth of 20 GHz.",
keywords = "Indium phosphide (InP), Monolithic millimeter-wave integrated circuit (MMIC), Terahertz amplifier",
author = "Park, {H. J.} and Rieh, {J. S.} and M. Kim and Hacker, {J. B.}",
year = "2010",
doi = "10.1109/MWSYM.2010.5518084",
language = "English",
isbn = "9781424477326",
series = "IEEE MTT-S International Microwave Symposium Digest",
pages = "49--52",
booktitle = "2010 IEEE MTT-S International Microwave Symposium, MTT 2010",
note = "2010 IEEE MTT-S International Microwave Symposium, MTT 2010 ; Conference date: 23-05-2010 Through 28-05-2010",
}