325 GHz CMOS power detector integrated with patch antenna

C. Yi; S. H. Choi; M. Kim

doi:10.1002/mop.30831

325 GHz CMOS power detector integrated with patch antenna

C. Yi, S. H. Choi, M. Kim

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

A 325 GHz power detector integrated with a microstrip patch antenna is fabricated using 65-nm CMOS technology. Measurements on the detector pixel show responsivity of 41.2 V/W and noise equivalent power of 36.8 pW/Hz^0.5. Two breakout circuits including a detector block and a patch antenna are additionally tested to understand the pixel performance. This analytical procedure should yield more accurate future detector pixel designs.

Original language	English
Pages (from-to)	2864-2867
Number of pages	4
Journal	Microwave and Optical Technology Letters
Volume	59
Issue number	11
DOIs	https://doi.org/10.1002/mop.30831
Publication status	Published - 2017 Nov

Bibliographical note

Funding Information:
This work was supported by Institute for Information & communications Technology Promotion (IITP) grant funded by Korean government (MSIP) (No. B0717-16-0047).

Publisher Copyright:
© 2017 Wiley Periodicals, Inc.

Keywords

65-nm CMOS
detector
patch antenna
terahertz pixel

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1002/mop.30831

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abstract = "A 325 GHz power detector integrated with a microstrip patch antenna is fabricated using 65-nm CMOS technology. Measurements on the detector pixel show responsivity of 41.2 V/W and noise equivalent power of 36.8 pW/Hz0.5. Two breakout circuits including a detector block and a patch antenna are additionally tested to understand the pixel performance. This analytical procedure should yield more accurate future detector pixel designs.",

keywords = "65-nm CMOS, detector, patch antenna, terahertz pixel",

author = "C. Yi and Choi, {S. H.} and M. Kim",

note = "Funding Information: This work was supported by Institute for Information & communications Technology Promotion (IITP) grant funded by Korean government (MSIP) (No. B0717-16-0047). Publisher Copyright: {\textcopyright} 2017 Wiley Periodicals, Inc.",

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AU - Yi, C.

AU - Choi, S. H.

AU - Kim, M.

N1 - Funding Information: This work was supported by Institute for Information & communications Technology Promotion (IITP) grant funded by Korean government (MSIP) (No. B0717-16-0047). Publisher Copyright: © 2017 Wiley Periodicals, Inc.

PY - 2017/11

Y1 - 2017/11

N2 - A 325 GHz power detector integrated with a microstrip patch antenna is fabricated using 65-nm CMOS technology. Measurements on the detector pixel show responsivity of 41.2 V/W and noise equivalent power of 36.8 pW/Hz0.5. Two breakout circuits including a detector block and a patch antenna are additionally tested to understand the pixel performance. This analytical procedure should yield more accurate future detector pixel designs.

AB - A 325 GHz power detector integrated with a microstrip patch antenna is fabricated using 65-nm CMOS technology. Measurements on the detector pixel show responsivity of 41.2 V/W and noise equivalent power of 36.8 pW/Hz0.5. Two breakout circuits including a detector block and a patch antenna are additionally tested to understand the pixel performance. This analytical procedure should yield more accurate future detector pixel designs.

KW - 65-nm CMOS

KW - detector

KW - patch antenna

KW - terahertz pixel

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JO - Microwave and Optical Technology Letters

JF - Microwave and Optical Technology Letters

IS - 11

ER -

325 GHz CMOS power detector integrated with patch antenna

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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