Abstract
A 325 GHz power detector integrated with a microstrip patch antenna is fabricated using 65-nm CMOS technology. Measurements on the detector pixel show responsivity of 41.2 V/W and noise equivalent power of 36.8 pW/Hz0.5. Two breakout circuits including a detector block and a patch antenna are additionally tested to understand the pixel performance. This analytical procedure should yield more accurate future detector pixel designs.
Original language | English |
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Pages (from-to) | 2864-2867 |
Number of pages | 4 |
Journal | Microwave and Optical Technology Letters |
Volume | 59 |
Issue number | 11 |
DOIs | |
Publication status | Published - 2017 Nov |
Keywords
- 65-nm CMOS
- detector
- patch antenna
- terahertz pixel
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering