40-Gb/s circuits built from a 120-GHz f T SiGe technology

Greg Freeman, Mounir Meghelli, Young Kwark, Steven Zier, Alexander Rylyakov, Michael A. Sorna, Todd Tanji, Oswin M. Schreiber, Keith Walter, Jae Sung Rieh, Basanth Jagannathan, Alvin Joseph, Seshadri Subbanna

Research output: Contribution to journalConference articlepeer-review

70 Citations (Scopus)


Product designs for 40-Gb/s applications fabricated from SiGe BiCMOS technologies are now becoming available. This paper will first briefly discuss heterojunction bipolar transistor (HBT) device operation at high speed, demonstrating that perceived concerns regarding lower BV CEO and higher current densities required to operate silicon HBTs at such high speeds do not in actuality limit design or performance. The high-speed portions of the 40-Gb/s system are then addressed individually. We demonstrate the digital capability through a 4:1 multiplexer and a 1:4 demultiplexer running over 50 Gb/s error free at a -3.3-V power supply. We also demonstrate a range of analog elements, including a lumped limiting amplifier which operates with a 35-GHz bandwidth, a transimpedance amplifier with 220-Ω gain and 49.1-GHz bandwidth, a 21.5-GHz voltage-controlled oscillator with over -100-dBc/Hz phase noise at 1-MHz offset, and a modulator driver which runs a voltage swing twice the BV CEO of the high-speed SiGe HBT. These parts demonstrate substantial results toward product offerings, on each of the critical high-speed elements of the 40-Gb/s system.

Original languageEnglish
Pages (from-to)1106-1114
Number of pages9
JournalIEEE Journal of Solid-State Circuits
Issue number9
Publication statusPublished - 2002 Sept
Externally publishedYes
Event23rd IEEE GaAs IC Symposium - Baltimore, MD, United States
Duration: 2001 Oct 212001 Oct 24


  • BiCMOS technology
  • Demultiplexer
  • Electro-absorption modulator driver
  • Multiplexer
  • Optical communication
  • SiGe bipolar transistors
  • Transimpedance amplifier

ASJC Scopus subject areas

  • Electrical and Electronic Engineering


Dive into the research topics of '40-Gb/s circuits built from a 120-GHz f T SiGe technology'. Together they form a unique fingerprint.

Cite this