40-Gb/s circuits built from a 120-GHz f T SiGe technology

Greg Freeman; Mounir Meghelli; Young Kwark; Steven Zier; Alexander Rylyakov; Michael A. Sorna; Todd Tanji; Oswin M. Schreiber; Keith Walter; Jae Sung Rieh; Basanth Jagannathan; Alvin Joseph; Seshadri Subbanna

doi:10.1109/JSSC.2002.801170

40-Gb/s circuits built from a 120-GHz f _T SiGe technology

Greg Freeman, Mounir Meghelli, Young Kwark, Steven Zier, Alexander Rylyakov, Michael A. Sorna, Todd Tanji, Oswin M. Schreiber, Keith Walter, Jae Sung Rieh, Basanth Jagannathan, Alvin Joseph, Seshadri Subbanna

Research output: Contribution to journal › Conference article › peer-review

40 Citations (Scopus)

Abstract

Product designs for 40-Gb/s applications fabricated from SiGe BiCMOS technologies are now becoming available. This paper will first briefly discuss heterojunction bipolar transistor (HBT) device operation at high speed, demonstrating that perceived concerns regarding lower BV _CEO and higher current densities required to operate silicon HBTs at such high speeds do not in actuality limit design or performance. The high-speed portions of the 40-Gb/s system are then addressed individually. We demonstrate the digital capability through a 4:1 multiplexer and a 1:4 demultiplexer running over 50 Gb/s error free at a -3.3-V power supply. We also demonstrate a range of analog elements, including a lumped limiting amplifier which operates with a 35-GHz bandwidth, a transimpedance amplifier with 220-Ω gain and 49.1-GHz bandwidth, a 21.5-GHz voltage-controlled oscillator with over -100-dBc/Hz phase noise at 1-MHz offset, and a modulator driver which runs a voltage swing twice the BV _CEO of the high-speed SiGe HBT. These parts demonstrate substantial results toward product offerings, on each of the critical high-speed elements of the 40-Gb/s system.

Original language	English
Pages (from-to)	1106-1114
Number of pages	9
Journal	IEEE Journal of Solid-State Circuits
Volume	37
Issue number	9
DOIs	https://doi.org/10.1109/JSSC.2002.801170
Publication status	Published - 2002 Sept
Externally published	Yes
Event	23rd IEEE GaAs IC Symposium - Baltimore, MD, United States Duration: 2001 Oct 21 → 2001 Oct 24

Keywords

BiCMOS technology
Demultiplexer
Electro-absorption modulator driver
Multiplexer
Optical communication
SiGe bipolar transistors
Transimpedance amplifier

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/JSSC.2002.801170

Cite this

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title = "40-Gb/s circuits built from a 120-GHz f T SiGe technology",

abstract = "Product designs for 40-Gb/s applications fabricated from SiGe BiCMOS technologies are now becoming available. This paper will first briefly discuss heterojunction bipolar transistor (HBT) device operation at high speed, demonstrating that perceived concerns regarding lower BV CEO and higher current densities required to operate silicon HBTs at such high speeds do not in actuality limit design or performance. The high-speed portions of the 40-Gb/s system are then addressed individually. We demonstrate the digital capability through a 4:1 multiplexer and a 1:4 demultiplexer running over 50 Gb/s error free at a -3.3-V power supply. We also demonstrate a range of analog elements, including a lumped limiting amplifier which operates with a 35-GHz bandwidth, a transimpedance amplifier with 220-Ω gain and 49.1-GHz bandwidth, a 21.5-GHz voltage-controlled oscillator with over -100-dBc/Hz phase noise at 1-MHz offset, and a modulator driver which runs a voltage swing twice the BV CEO of the high-speed SiGe HBT. These parts demonstrate substantial results toward product offerings, on each of the critical high-speed elements of the 40-Gb/s system.",

keywords = "BiCMOS technology, Demultiplexer, Electro-absorption modulator driver, Multiplexer, Optical communication, SiGe bipolar transistors, Transimpedance amplifier",

author = "Greg Freeman and Mounir Meghelli and Young Kwark and Steven Zier and Alexander Rylyakov and Sorna, {Michael A.} and Todd Tanji and Schreiber, {Oswin M.} and Keith Walter and Rieh, {Jae Sung} and Basanth Jagannathan and Alvin Joseph and Seshadri Subbanna",

year = "2002",

month = sep,

doi = "10.1109/JSSC.2002.801170",

language = "English",

volume = "37",

pages = "1106--1114",

journal = "IEEE Journal of Solid-State Circuits",

issn = "0018-9200",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "9",

note = "23rd IEEE GaAs IC Symposium ; Conference date: 21-10-2001 Through 24-10-2001",

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TY - JOUR

T1 - 40-Gb/s circuits built from a 120-GHz f T SiGe technology

AU - Freeman, Greg

AU - Meghelli, Mounir

AU - Kwark, Young

AU - Zier, Steven

AU - Rylyakov, Alexander

AU - Sorna, Michael A.

AU - Tanji, Todd

AU - Schreiber, Oswin M.

AU - Walter, Keith

AU - Rieh, Jae Sung

AU - Jagannathan, Basanth

AU - Joseph, Alvin

AU - Subbanna, Seshadri

PY - 2002/9

Y1 - 2002/9

N2 - Product designs for 40-Gb/s applications fabricated from SiGe BiCMOS technologies are now becoming available. This paper will first briefly discuss heterojunction bipolar transistor (HBT) device operation at high speed, demonstrating that perceived concerns regarding lower BV CEO and higher current densities required to operate silicon HBTs at such high speeds do not in actuality limit design or performance. The high-speed portions of the 40-Gb/s system are then addressed individually. We demonstrate the digital capability through a 4:1 multiplexer and a 1:4 demultiplexer running over 50 Gb/s error free at a -3.3-V power supply. We also demonstrate a range of analog elements, including a lumped limiting amplifier which operates with a 35-GHz bandwidth, a transimpedance amplifier with 220-Ω gain and 49.1-GHz bandwidth, a 21.5-GHz voltage-controlled oscillator with over -100-dBc/Hz phase noise at 1-MHz offset, and a modulator driver which runs a voltage swing twice the BV CEO of the high-speed SiGe HBT. These parts demonstrate substantial results toward product offerings, on each of the critical high-speed elements of the 40-Gb/s system.

AB - Product designs for 40-Gb/s applications fabricated from SiGe BiCMOS technologies are now becoming available. This paper will first briefly discuss heterojunction bipolar transistor (HBT) device operation at high speed, demonstrating that perceived concerns regarding lower BV CEO and higher current densities required to operate silicon HBTs at such high speeds do not in actuality limit design or performance. The high-speed portions of the 40-Gb/s system are then addressed individually. We demonstrate the digital capability through a 4:1 multiplexer and a 1:4 demultiplexer running over 50 Gb/s error free at a -3.3-V power supply. We also demonstrate a range of analog elements, including a lumped limiting amplifier which operates with a 35-GHz bandwidth, a transimpedance amplifier with 220-Ω gain and 49.1-GHz bandwidth, a 21.5-GHz voltage-controlled oscillator with over -100-dBc/Hz phase noise at 1-MHz offset, and a modulator driver which runs a voltage swing twice the BV CEO of the high-speed SiGe HBT. These parts demonstrate substantial results toward product offerings, on each of the critical high-speed elements of the 40-Gb/s system.

KW - BiCMOS technology

KW - Demultiplexer

KW - Electro-absorption modulator driver

KW - Multiplexer

KW - Optical communication

KW - SiGe bipolar transistors

KW - Transimpedance amplifier

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DO - 10.1109/JSSC.2002.801170

M3 - Conference article

AN - SCOPUS:0036712192

SN - 0018-9200

VL - 37

SP - 1106

EP - 1114

JO - IEEE Journal of Solid-State Circuits

JF - IEEE Journal of Solid-State Circuits

IS - 9

T2 - 23rd IEEE GaAs IC Symposium

Y2 - 21 October 2001 through 24 October 2001

ER -