4H-SiC Schottky diode array with 430 A forward current

Jihyun Kim; K. H. Baik; B. S. Kang; S. Kim; Y. Irokawa; F. Ren; S. J. Pearton; G. Y. Chung

doi:10.1149/1.1697908

4H-SiC Schottky diode array with 430 A forward current

Jihyun Kim, K. H. Baik, B. S. Kang, S. Kim, Y. Irokawa, F. Ren, S. J. Pearton, G. Y. Chung

Research output: Contribution to journal › Article › peer-review

Abstract

An array (305 devices) of 500 × 500 μm 4H-SiC Schottky rectifiers was interconnected using electroplated Au and clamped in a Cu pressure contact flat package. A peak total forward current of 430 A at 5.7V was achieved, with an on-state resistance (R_on) of 5.8 × 10^-3 Ωcm². The figure-of-merit, V_B²/R _on, where V_B is the reverse breakdown voltage, was 0.69MW/cm². Thermal simulations showed that the Cu press-pack was capable of maintaining the temperature of the SiC array at < 315 K under pulsed conditions whereas without this heat-sinking the temperature rise was extremely rapid.

Original language	English
Pages (from-to)	G125-G127
Journal	Electrochemical and Solid-State Letters
Volume	7
Issue number	6
DOIs	https://doi.org/10.1149/1.1697908
Publication status	Published - 2004
Externally published	Yes

ASJC Scopus subject areas

General Chemical Engineering
General Materials Science
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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10.1149/1.1697908

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title = "4H-SiC Schottky diode array with 430 A forward current",

abstract = "An array (305 devices) of 500 × 500 μm 4H-SiC Schottky rectifiers was interconnected using electroplated Au and clamped in a Cu pressure contact flat package. A peak total forward current of 430 A at 5.7V was achieved, with an on-state resistance (Ron) of 5.8 × 10-3 Ωcm2. The figure-of-merit, VB2/R on, where VB is the reverse breakdown voltage, was 0.69MW/cm2. Thermal simulations showed that the Cu press-pack was capable of maintaining the temperature of the SiC array at < 315 K under pulsed conditions whereas without this heat-sinking the temperature rise was extremely rapid.",

author = "Jihyun Kim and Baik, {K. H.} and Kang, {B. S.} and S. Kim and Y. Irokawa and F. Ren and Pearton, {S. J.} and Chung, {G. Y.}",

year = "2004",

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language = "English",

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pages = "G125--G127",

journal = "Electrochemical and Solid-State Letters",

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TY - JOUR

T1 - 4H-SiC Schottky diode array with 430 A forward current

AU - Kim, Jihyun

AU - Baik, K. H.

AU - Kang, B. S.

AU - Kim, S.

AU - Irokawa, Y.

AU - Ren, F.

AU - Pearton, S. J.

AU - Chung, G. Y.

PY - 2004

Y1 - 2004

N2 - An array (305 devices) of 500 × 500 μm 4H-SiC Schottky rectifiers was interconnected using electroplated Au and clamped in a Cu pressure contact flat package. A peak total forward current of 430 A at 5.7V was achieved, with an on-state resistance (Ron) of 5.8 × 10-3 Ωcm2. The figure-of-merit, VB2/R on, where VB is the reverse breakdown voltage, was 0.69MW/cm2. Thermal simulations showed that the Cu press-pack was capable of maintaining the temperature of the SiC array at < 315 K under pulsed conditions whereas without this heat-sinking the temperature rise was extremely rapid.

AB - An array (305 devices) of 500 × 500 μm 4H-SiC Schottky rectifiers was interconnected using electroplated Au and clamped in a Cu pressure contact flat package. A peak total forward current of 430 A at 5.7V was achieved, with an on-state resistance (Ron) of 5.8 × 10-3 Ωcm2. The figure-of-merit, VB2/R on, where VB is the reverse breakdown voltage, was 0.69MW/cm2. Thermal simulations showed that the Cu press-pack was capable of maintaining the temperature of the SiC array at < 315 K under pulsed conditions whereas without this heat-sinking the temperature rise was extremely rapid.

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DO - 10.1149/1.1697908

M3 - Article

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SN - 1099-0062

VL - 7

SP - G125-G127

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

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ER -

4H-SiC Schottky diode array with 430 A forward current

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