50-200 GHz silicon-germanium heterojunction bipolar transistor BICMOS technology and a computer-aided design environment for 2-50+GHz very large-scale integration mixed-signal ICs
Seshadri Subbanna, Gregory Freeman, Jae Sung Rieh, David Ahlgren, Kenneth Stein, Carl Dickey, James Mecke, Peter Bacon, Robert Groves, Mounir Meghelli, Mehmet Soyuer, Basanth Jagannathan, Kathryn Schonenberg, Shwu Jen Jeng, Alvin Joseph, Douglas Coolbaugh, Richard Volant, David Greenberg, Huajie Chen, Kevin BrelsfordDavid Harame, James Dunn, Lawrence Larson, Dean Herman, Bernard Meyerson
Research output: Contribution to journal › Article › peer-review
Dive into the research topics of '50-200 GHz silicon-germanium heterojunction bipolar transistor BICMOS technology and a computer-aided design environment for 2-50+GHz very large-scale integration mixed-signal ICs'. Together they form a unique fingerprint.