A V-band wideband variable gain low-noise amplifier (VGLNA) with a 3dB bandwidth of 14GHz (58-72GHz) is developed in a 65nm RFCMOS technology. The three-stage VGLNA, adopting the current steering method for the gain control, shows a measured peak power gain of 21.8dB with a 1dB gain flatness of 10GHz (60-70GHz). With tuning voltage adjusted from 0.8 to 2.8V, the gain and noise figure are varied from 21.8 to 12.8dB and from 4.2 to 5.7dB, respectively, at 64GHz. Input P-1dB was measured to be -22.1dBm. DC power consumption is 36mW with VDD=1.2V and the chip size is 0.75×0.65mm.
ASJC Scopus subject areas
- Electrical and Electronic Engineering