58-72GHz CMOS wideband variable gain low-noise amplifier

S. Kim; H. C. Kim; D. H. Kim; S. Jeon; M. Kim; J. S. Rieh

doi:10.1049/el.2011.1741

58-72GHz CMOS wideband variable gain low-noise amplifier

S. Kim, H. C. Kim, D. H. Kim, S. Jeon, M. Kim, J. S. Rieh

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

A V-band wideband variable gain low-noise amplifier (VGLNA) with a 3dB bandwidth of 14GHz (58-72GHz) is developed in a 65nm RFCMOS technology. The three-stage VGLNA, adopting the current steering method for the gain control, shows a measured peak power gain of 21.8dB with a 1dB gain flatness of 10GHz (60-70GHz). With tuning voltage adjusted from 0.8 to 2.8V, the gain and noise figure are varied from 21.8 to 12.8dB and from 4.2 to 5.7dB, respectively, at 64GHz. Input P_-1dB was measured to be -22.1dBm. DC power consumption is 36mW with V_DD=1.2V and the chip size is 0.75×0.65mm.

Original language	English
Pages (from-to)	904-906
Number of pages	3
Journal	Electronics Letters
Volume	47
Issue number	16
DOIs	https://doi.org/10.1049/el.2011.1741
Publication status	Published - 2011 Aug 4

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el.2011.1741

Cite this

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title = "58-72GHz CMOS wideband variable gain low-noise amplifier",

abstract = "A V-band wideband variable gain low-noise amplifier (VGLNA) with a 3dB bandwidth of 14GHz (58-72GHz) is developed in a 65nm RFCMOS technology. The three-stage VGLNA, adopting the current steering method for the gain control, shows a measured peak power gain of 21.8dB with a 1dB gain flatness of 10GHz (60-70GHz). With tuning voltage adjusted from 0.8 to 2.8V, the gain and noise figure are varied from 21.8 to 12.8dB and from 4.2 to 5.7dB, respectively, at 64GHz. Input P-1dB was measured to be -22.1dBm. DC power consumption is 36mW with VDD=1.2V and the chip size is 0.75×0.65mm.",

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AU - Kim, S.

AU - Kim, H. C.

AU - Kim, D. H.

AU - Jeon, S.

AU - Kim, M.

AU - Rieh, J. S.

PY - 2011/8/4

Y1 - 2011/8/4

N2 - A V-band wideband variable gain low-noise amplifier (VGLNA) with a 3dB bandwidth of 14GHz (58-72GHz) is developed in a 65nm RFCMOS technology. The three-stage VGLNA, adopting the current steering method for the gain control, shows a measured peak power gain of 21.8dB with a 1dB gain flatness of 10GHz (60-70GHz). With tuning voltage adjusted from 0.8 to 2.8V, the gain and noise figure are varied from 21.8 to 12.8dB and from 4.2 to 5.7dB, respectively, at 64GHz. Input P-1dB was measured to be -22.1dBm. DC power consumption is 36mW with VDD=1.2V and the chip size is 0.75×0.65mm.

AB - A V-band wideband variable gain low-noise amplifier (VGLNA) with a 3dB bandwidth of 14GHz (58-72GHz) is developed in a 65nm RFCMOS technology. The three-stage VGLNA, adopting the current steering method for the gain control, shows a measured peak power gain of 21.8dB with a 1dB gain flatness of 10GHz (60-70GHz). With tuning voltage adjusted from 0.8 to 2.8V, the gain and noise figure are varied from 21.8 to 12.8dB and from 4.2 to 5.7dB, respectively, at 64GHz. Input P-1dB was measured to be -22.1dBm. DC power consumption is 36mW with VDD=1.2V and the chip size is 0.75×0.65mm.

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58-72GHz CMOS wideband variable gain low-noise amplifier

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