600 GHz InP HBT frequency multiplier

S. H. Choi; M. Urteaga; M. Kim

doi:10.1049/el.2015.2916

600 GHz InP HBT frequency multiplier

S. H. Choi, M. Urteaga, M. Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

A 600 GHz monolithic frequency multiplier circuit fabricated using 0.25 ìm InP HBT (heterojunction bipolar technology) technology is reported. The multiplier uses two 6 ìm finger devices in commonbase push-push configuration to obtain extremely simple matching networks. Measurements using on-wafer RF probes indicate maximum output power of.8.3 dBm at 590 GHz with a wide operation bandwidth of better than 50 GHz.

Original language	English
Pages (from-to)	1928-1930
Number of pages	3
Journal	Electronics Letters
Volume	51
Issue number	23
DOIs	https://doi.org/10.1049/el.2015.2916
Publication status	Published - 2015 Nov 5

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el.2015.2916

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title = "600 GHz InP HBT frequency multiplier",

abstract = "A 600 GHz monolithic frequency multiplier circuit fabricated using 0.25 {\`i}m InP HBT (heterojunction bipolar technology) technology is reported. The multiplier uses two 6 {\`i}m finger devices in commonbase push-push configuration to obtain extremely simple matching networks. Measurements using on-wafer RF probes indicate maximum output power of.8.3 dBm at 590 GHz with a wide operation bandwidth of better than 50 GHz.",

author = "Choi, {S. H.} and M. Urteaga and M. Kim",

note = "Publisher Copyright: {\textcopyright} The Institution of Engineering and Technology 2015.",

year = "2015",

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doi = "10.1049/el.2015.2916",

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AU - Choi, S. H.

AU - Urteaga, M.

AU - Kim, M.

PY - 2015/11/5

Y1 - 2015/11/5

N2 - A 600 GHz monolithic frequency multiplier circuit fabricated using 0.25 ìm InP HBT (heterojunction bipolar technology) technology is reported. The multiplier uses two 6 ìm finger devices in commonbase push-push configuration to obtain extremely simple matching networks. Measurements using on-wafer RF probes indicate maximum output power of.8.3 dBm at 590 GHz with a wide operation bandwidth of better than 50 GHz.

AB - A 600 GHz monolithic frequency multiplier circuit fabricated using 0.25 ìm InP HBT (heterojunction bipolar technology) technology is reported. The multiplier uses two 6 ìm finger devices in commonbase push-push configuration to obtain extremely simple matching networks. Measurements using on-wafer RF probes indicate maximum output power of.8.3 dBm at 590 GHz with a wide operation bandwidth of better than 50 GHz.

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DO - 10.1049/el.2015.2916

M3 - Article

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VL - 51

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JO - Electronics Letters

JF - Electronics Letters

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ER -

600 GHz InP HBT frequency multiplier

Abstract

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