645-GHz InP heterojunction bipolar transistor harmonic oscillator

J. Yun, J. Kim, D. Yoon, J. S. Rieh

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)


645-GHz signal generation with a harmonic oscillator based on a 250-nm InP heterojunction bipolar transistor technology is demonstrated. The oscillator is based on the common-base cross-coupled topology, generating a second harmonic signal through the push–push operation. The fabricated oscillator exhibits oscillation frequencies ranging from 561.5 to 645.1 GHz with bias variation. The measured peak output power is –17.4 dBm with a dc power dissipation of 49.3 mW (dc-to-RF efficiency of 0.04%). Additionally, terahertz imaging was successfully demonstrated with the developed oscillator employed as a signal source.

Original languageEnglish
Pages (from-to)1475-1477
Number of pages3
JournalElectronics Letters
Issue number22
Publication statusPublished - 2017 Oct

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (NRF-2015R1A2A1A05001836).

Publisher Copyright:
© The Institution of Engineering and Technology 2017.

ASJC Scopus subject areas

  • Electrical and Electronic Engineering


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