A 0.017 μJ/sample 313K sample/sec clamped sensing-based time domain CMOS temperature sensor

Se Chun Park; Sung Dae Choi; Hyeonseok Hwang; Byeonghak Jo; Seung Baek Park; Soo Won Kim

doi:10.1587/elex.12.20141133

A 0.017 μJ/sample 313K sample/sec clamped sensing-based time domain CMOS temperature sensor

Se Chun Park, Sung Dae Choi, Hyeonseok Hwang, Byeonghak Jo, Seung Baek Park, Soo Won Kim

* Honorary professors

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

This paper describes the design of a CMOS temperature sensor intended to compensate for the thermal effect of NAND Flash cells. The temperature sensor is mainly composed of a SENSOR part and COUNTER part. The SENSOR part generates a pulse (T_PTAT); its width is proportional to absolute temperature (PTAT). Futhermore, the clamped sensing scheme is used to eliminate the effects of temperature and process skew variation of sensing circuits. The COUNTER part converts T_PTAT to digital codes. The proposed temperature sensor consumes a 0.017 μJ/sample at a conversion rate of 313K sample/sec.

Original language	English
Article number	20141133
Journal	ieice electronics express
Volume	12
Issue number	5
DOIs	https://doi.org/10.1587/elex.12.20141133
Publication status	Published - 2015 Mar 30

Keywords

CMOS temperature sensor
Clamped sensing
PTAT
Temperature coefficient

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1587/elex.12.20141133

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abstract = "This paper describes the design of a CMOS temperature sensor intended to compensate for the thermal effect of NAND Flash cells. The temperature sensor is mainly composed of a SENSOR part and COUNTER part. The SENSOR part generates a pulse (TPTAT); its width is proportional to absolute temperature (PTAT). Futhermore, the clamped sensing scheme is used to eliminate the effects of temperature and process skew variation of sensing circuits. The COUNTER part converts TPTAT to digital codes. The proposed temperature sensor consumes a 0.017 μJ/sample at a conversion rate of 313K sample/sec.",

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AU - Choi, Sung Dae

AU - Hwang, Hyeonseok

AU - Jo, Byeonghak

AU - Park, Seung Baek

AU - Kim, Soo Won

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N2 - This paper describes the design of a CMOS temperature sensor intended to compensate for the thermal effect of NAND Flash cells. The temperature sensor is mainly composed of a SENSOR part and COUNTER part. The SENSOR part generates a pulse (TPTAT); its width is proportional to absolute temperature (PTAT). Futhermore, the clamped sensing scheme is used to eliminate the effects of temperature and process skew variation of sensing circuits. The COUNTER part converts TPTAT to digital codes. The proposed temperature sensor consumes a 0.017 μJ/sample at a conversion rate of 313K sample/sec.

AB - This paper describes the design of a CMOS temperature sensor intended to compensate for the thermal effect of NAND Flash cells. The temperature sensor is mainly composed of a SENSOR part and COUNTER part. The SENSOR part generates a pulse (TPTAT); its width is proportional to absolute temperature (PTAT). Futhermore, the clamped sensing scheme is used to eliminate the effects of temperature and process skew variation of sensing circuits. The COUNTER part converts TPTAT to digital codes. The proposed temperature sensor consumes a 0.017 μJ/sample at a conversion rate of 313K sample/sec.

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KW - Clamped sensing

KW - PTAT

KW - Temperature coefficient

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A 0.017 μJ/sample 313K sample/sec clamped sensing-based time domain CMOS temperature sensor

Abstract

Keywords

ASJC Scopus subject areas

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