Abstract
We present for the first time a very high performance SiGeHBT with fT = 200 GHz and fmax = 280 GHz that has been successfully integrated with IBM's standard 0.13 m foundry-compatible CMOS node into our next generation BiCMOS 8HP technology.
Original language | English |
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Pages | 203-206 |
Number of pages | 4 |
Publication status | Published - 2003 |
Externally published | Yes |
Event | Proceedings of the 2003 BIPOLAR/BICMOS Circuits and Technology Meeting - Toulouse, France Duration: 2003 Sept 28 → 2003 Sept 30 |
Conference
Conference | Proceedings of the 2003 BIPOLAR/BICMOS Circuits and Technology Meeting |
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Country/Territory | France |
City | Toulouse |
Period | 03/9/28 → 03/9/30 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering