A 0.13 m BiCMOS technology featuring a 200/280 GHz (fT/fmax) SiGe HBT

B. A. Orner, Q. Z. Liu, B. Rainey, A. Stricker, P. Geiss, P. Gray, M. Zierak, M. Gordon, D. Collins, V. Ramachandran, W. Hodge, C. Willets, A. Joseph, J. Dunn, J. S. Rieh, S. J. Jeng, E. Eld, G. Freeman, D. Ahlgren

Research output: Contribution to conferencePaperpeer-review

88 Citations (Scopus)

Abstract

We present for the first time a very high performance SiGeHBT with fT = 200 GHz and fmax = 280 GHz that has been successfully integrated with IBM's standard 0.13 m foundry-compatible CMOS node into our next generation BiCMOS 8HP technology.

Original languageEnglish
Pages203-206
Number of pages4
Publication statusPublished - 2003
Externally publishedYes
EventProceedings of the 2003 BIPOLAR/BICMOS Circuits and Technology Meeting - Toulouse, France
Duration: 2003 Sept 282003 Sept 30

Conference

ConferenceProceedings of the 2003 BIPOLAR/BICMOS Circuits and Technology Meeting
Country/TerritoryFrance
CityToulouse
Period03/9/2803/9/30

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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