Abstract
A charge pump using 0.13-μm CMOS process for low-voltage energy harvesting is presented. A low-power adaptive dead-time (AD) circuit is used which automatically optimizes the dead-time according to the input voltage. A negative charge pump is also utilized for high efficiency at low input voltages VIN. The AD circuit improves efficiency by 17% at VIN of 0.2 V compared to the fixed dead time circuit as well as enables the charge pump to work at VIN down to 0.15 V. Dynamic body bias (DBB) and switch-conductance enhancement techniques are applied to a unit stage of the three-stage charge pump. The reverse current flowing through the cross-coupled NMOS switches is prevented and the current transfer is also maximized. Together with the AD circuit and the DBB technique, the maximum output current was improved by 240% as compared to the conventional charge pump design using only the forward body bias.
Original language | English |
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Article number | 6998083 |
Pages (from-to) | 414-425 |
Number of pages | 12 |
Journal | IEEE Journal of Solid-State Circuits |
Volume | 50 |
Issue number | 2 |
DOIs | |
Publication status | Published - 2015 Feb 1 |
Bibliographical note
Publisher Copyright:© 2014 IEEE.
Keywords
- Body biasing
- boost converter
- charge pump
- conversion efficiency
- dc-dc converter
- dead-time
- energy harvesting
- low voltage
- threshold voltage
- variation
ASJC Scopus subject areas
- Electrical and Electronic Engineering