A 0.15 v input energy harvesting charge pump with dynamic body biasing and adaptive dead-time for efficiency improvement

Jungmoon Kim; Philip K.T. Mok; Chulwoo Kim

doi:10.1109/JSSC.2014.2375824

A 0.15 v input energy harvesting charge pump with dynamic body biasing and adaptive dead-time for efficiency improvement

Jungmoon Kim, Philip K.T. Mok, Chulwoo Kim

Research output: Contribution to journal › Article › peer-review

132 Citations (Scopus)

Abstract

A charge pump using 0.13-μm CMOS process for low-voltage energy harvesting is presented. A low-power adaptive dead-time (AD) circuit is used which automatically optimizes the dead-time according to the input voltage. A negative charge pump is also utilized for high efficiency at low input voltages V_IN. The AD circuit improves efficiency by 17% at V_IN of 0.2 V compared to the fixed dead time circuit as well as enables the charge pump to work at V_IN down to 0.15 V. Dynamic body bias (DBB) and switch-conductance enhancement techniques are applied to a unit stage of the three-stage charge pump. The reverse current flowing through the cross-coupled NMOS switches is prevented and the current transfer is also maximized. Together with the AD circuit and the DBB technique, the maximum output current was improved by 240% as compared to the conventional charge pump design using only the forward body bias.

Original language	English
Article number	6998083
Pages (from-to)	414-425
Number of pages	12
Journal	IEEE Journal of Solid-State Circuits
Volume	50
Issue number	2
DOIs	https://doi.org/10.1109/JSSC.2014.2375824
Publication status	Published - 2015 Feb 1

Bibliographical note

Publisher Copyright:
© 2014 IEEE.

Keywords

Body biasing
boost converter
charge pump
conversion efficiency
dc-dc converter
dead-time
energy harvesting
low voltage
threshold voltage
variation

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1109/JSSC.2014.2375824

Cite this

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title = "A 0.15 v input energy harvesting charge pump with dynamic body biasing and adaptive dead-time for efficiency improvement",

abstract = "A charge pump using 0.13-μm CMOS process for low-voltage energy harvesting is presented. A low-power adaptive dead-time (AD) circuit is used which automatically optimizes the dead-time according to the input voltage. A negative charge pump is also utilized for high efficiency at low input voltages VIN. The AD circuit improves efficiency by 17% at VIN of 0.2 V compared to the fixed dead time circuit as well as enables the charge pump to work at VIN down to 0.15 V. Dynamic body bias (DBB) and switch-conductance enhancement techniques are applied to a unit stage of the three-stage charge pump. The reverse current flowing through the cross-coupled NMOS switches is prevented and the current transfer is also maximized. Together with the AD circuit and the DBB technique, the maximum output current was improved by 240% as compared to the conventional charge pump design using only the forward body bias.",

keywords = "Body biasing, boost converter, charge pump, conversion efficiency, dc-dc converter, dead-time, energy harvesting, low voltage, threshold voltage, variation",

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AU - Mok, Philip K.T.

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Y1 - 2015/2/1

N2 - A charge pump using 0.13-μm CMOS process for low-voltage energy harvesting is presented. A low-power adaptive dead-time (AD) circuit is used which automatically optimizes the dead-time according to the input voltage. A negative charge pump is also utilized for high efficiency at low input voltages VIN. The AD circuit improves efficiency by 17% at VIN of 0.2 V compared to the fixed dead time circuit as well as enables the charge pump to work at VIN down to 0.15 V. Dynamic body bias (DBB) and switch-conductance enhancement techniques are applied to a unit stage of the three-stage charge pump. The reverse current flowing through the cross-coupled NMOS switches is prevented and the current transfer is also maximized. Together with the AD circuit and the DBB technique, the maximum output current was improved by 240% as compared to the conventional charge pump design using only the forward body bias.

AB - A charge pump using 0.13-μm CMOS process for low-voltage energy harvesting is presented. A low-power adaptive dead-time (AD) circuit is used which automatically optimizes the dead-time according to the input voltage. A negative charge pump is also utilized for high efficiency at low input voltages VIN. The AD circuit improves efficiency by 17% at VIN of 0.2 V compared to the fixed dead time circuit as well as enables the charge pump to work at VIN down to 0.15 V. Dynamic body bias (DBB) and switch-conductance enhancement techniques are applied to a unit stage of the three-stage charge pump. The reverse current flowing through the cross-coupled NMOS switches is prevented and the current transfer is also maximized. Together with the AD circuit and the DBB technique, the maximum output current was improved by 240% as compared to the conventional charge pump design using only the forward body bias.

KW - Body biasing

KW - boost converter

KW - charge pump

KW - conversion efficiency

KW - dc-dc converter

KW - dead-time

KW - energy harvesting

KW - low voltage

KW - threshold voltage

KW - variation

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ER -

A 0.15 v input energy harvesting charge pump with dynamic body biasing and adaptive dead-time for efficiency improvement

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

Access to Document

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