A 0.3V-VIN, 0.015ps-FoM Fully Integrated Analog-Assisted Digital LDO With Dual-Negative Gate Control and Adaptive Transient Recovery Path

Hyunjun Park, Woojoong Jung, Minsu Kim, Seki Kim, Hyongmin Lee, Sangho Kim, Jongwoo Lee, Hyung Min Lee

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

This letter presents a fully integrated analog-assisted (AA) digital low-dropout regulator (DLDO) to operate at low input voltage (VIN) with fast transient response. A negative voltage gate driver (NVGD) enables low-VDS triode operation and large current capacity of pass transistors even at low VIN of 0.3 V by utilizing a negative voltage. A dual negative voltage tank (DNVT) compensates for leakage in NVGD for reliable output regulation. An adaptive transient recovery path (ATRP) in AA loops expedites output voltage (VOUT) regulation against a large load current (ILOAD) step. The negative supply from DNVT also enhances inverter-based comparators in ATRP at low VIN. The proposed DLDO fabricated in a 28 nm complementary metal-oxide-semiconductor (CMOS) process operates at lowest VIN of 0.3 - 1 V with 50 mV dropout among state-of-the-art DLDOs. The DLDO consumes quiescent current of 23 μA, while providing large ILOAD up to 800 mA. The ATRP ensures small VOUT droop of 97 mV against ΔILOAD of 380 mA, achieving a low figure-of-merit (FoM) of 0.015 ps.

Original languageEnglish
Pages (from-to)85-89
Number of pages5
JournalIEEE Transactions on Power Electronics
Volume38
Issue number1
DOIs
Publication statusPublished - 2023 Jan 1

Bibliographical note

Publisher Copyright:
© 1986-2012 IEEE.

Keywords

  • Adaptive transient recovery path (ATRP)
  • analog-assisted (AA)
  • digital low drop-out regulator (LDO)
  • dual negative voltage tank (DNVT)
  • low input voltage (V)
  • negative voltage gate driver (NVGD)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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