A 100-Element HBT Grid Amplifier

Moonil Kim; Jonathan B. Hacker; Michael P. De Lisio; Jung Chih Chiao; Shi Jie Li; David B. Rutledge; Emilio A. Sovero; David R. Gagnon; James J. Rosenberg

doi:10.1109/22.247921

A 100-Element HBT Grid Amplifier

Moonil Kim, Jonathan B. Hacker, Michael P. De Lisio, Jung Chih Chiao, Shi Jie Li, David B. Rutledge, Emilio A. Sovero, David R. Gagnon, James J. Rosenberg

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

40 Citations (Scopus)

Abstract

A 100-element 10-GHz grid amplifier has been developed. The active devices in the grid are chips with heterojunction-bipolar-transistor (HBT) differential-pairs. The metal grid pattern was empirically designed to provide effective coupling between the HBT's and free space. Two independent measurements, one with focusing lenses, the other without, were used to characterize the grid. In each case, the peak gain was 10 dB at 10 GHz with a 3-dB bandwidth of 1 GHz. The input and output return loss were better than 15 dB at 10 GHz. The maximum output power was 450 mW, and the minimum noise figure was 7 dB. By varying the bias, a signal could be amplitude modulated with a modulation index as large as 0.65. Tests show that the grid was quite tolerant of failures—the output power dropped by only 1 dB when 10% of the inputs were detuned. The grid amplifier is a multimode device that amplifies beams of different shapes and angles. Beams with incidence angles up to 30° were amplified with less than a 3-dB drop in gain.

Original language	English
Pages (from-to)	1762-1771
Number of pages	10
Journal	IEEE Transactions on Microwave Theory and Techniques
Volume	41
Issue number	10
DOIs	https://doi.org/10.1109/22.247921
Publication status	Published - 1993 Oct

ASJC Scopus subject areas

Radiation
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/22.247921

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title = "A 100-Element HBT Grid Amplifier",

abstract = "A 100-element 10-GHz grid amplifier has been developed. The active devices in the grid are chips with heterojunction-bipolar-transistor (HBT) differential-pairs. The metal grid pattern was empirically designed to provide effective coupling between the HBT's and free space. Two independent measurements, one with focusing lenses, the other without, were used to characterize the grid. In each case, the peak gain was 10 dB at 10 GHz with a 3-dB bandwidth of 1 GHz. The input and output return loss were better than 15 dB at 10 GHz. The maximum output power was 450 mW, and the minimum noise figure was 7 dB. By varying the bias, a signal could be amplitude modulated with a modulation index as large as 0.65. Tests show that the grid was quite tolerant of failures—the output power dropped by only 1 dB when 10% of the inputs were detuned. The grid amplifier is a multimode device that amplifies beams of different shapes and angles. Beams with incidence angles up to 30° were amplified with less than a 3-dB drop in gain.",

author = "Moonil Kim and Hacker, {Jonathan B.} and {De Lisio}, {Michael P.} and Chiao, {Jung Chih} and Li, {Shi Jie} and Rutledge, {David B.} and Sovero, {Emilio A.} and Gagnon, {David R.} and Rosenberg, {James J.}",

note = "Funding Information: Manuscript received November 1, 1992; revised February 1, 1992. The work at Caltech was supported by the Army Research Office, the Northrop Corporation, the Naval Weapons Center in China Lake, CA, and the Rockwell International Trust, and the Jet Propulsion Laboratory.",

year = "1993",

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AU - Rutledge, David B.

AU - Sovero, Emilio A.

AU - Gagnon, David R.

AU - Rosenberg, James J.

N1 - Funding Information: Manuscript received November 1, 1992; revised February 1, 1992. The work at Caltech was supported by the Army Research Office, the Northrop Corporation, the Naval Weapons Center in China Lake, CA, and the Rockwell International Trust, and the Jet Propulsion Laboratory.

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N2 - A 100-element 10-GHz grid amplifier has been developed. The active devices in the grid are chips with heterojunction-bipolar-transistor (HBT) differential-pairs. The metal grid pattern was empirically designed to provide effective coupling between the HBT's and free space. Two independent measurements, one with focusing lenses, the other without, were used to characterize the grid. In each case, the peak gain was 10 dB at 10 GHz with a 3-dB bandwidth of 1 GHz. The input and output return loss were better than 15 dB at 10 GHz. The maximum output power was 450 mW, and the minimum noise figure was 7 dB. By varying the bias, a signal could be amplitude modulated with a modulation index as large as 0.65. Tests show that the grid was quite tolerant of failures—the output power dropped by only 1 dB when 10% of the inputs were detuned. The grid amplifier is a multimode device that amplifies beams of different shapes and angles. Beams with incidence angles up to 30° were amplified with less than a 3-dB drop in gain.

AB - A 100-element 10-GHz grid amplifier has been developed. The active devices in the grid are chips with heterojunction-bipolar-transistor (HBT) differential-pairs. The metal grid pattern was empirically designed to provide effective coupling between the HBT's and free space. Two independent measurements, one with focusing lenses, the other without, were used to characterize the grid. In each case, the peak gain was 10 dB at 10 GHz with a 3-dB bandwidth of 1 GHz. The input and output return loss were better than 15 dB at 10 GHz. The maximum output power was 450 mW, and the minimum noise figure was 7 dB. By varying the bias, a signal could be amplitude modulated with a modulation index as large as 0.65. Tests show that the grid was quite tolerant of failures—the output power dropped by only 1 dB when 10% of the inputs were detuned. The grid amplifier is a multimode device that amplifies beams of different shapes and angles. Beams with incidence angles up to 30° were amplified with less than a 3-dB drop in gain.

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A 100-Element HBT Grid Amplifier

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