A 10–100-GHz Wideband Amplifier With Low-Impedance Coupled Lines in SiGe BiCMOS

Doyoon Kim; Heekang Son; Jungsoo Kim; Jaeman Lee; Yan Zhao; Richard Al Hadi; Mehmet Kaynak; Mau Chung Frank Chang; Jae Sung Rieh

doi:10.1109/LMWT.2023.3288114

A 10–100-GHz Wideband Amplifier With Low-Impedance Coupled Lines in SiGe BiCMOS

Doyoon Kim, Heekang Son, Jungsoo Kim, Jaeman Lee, Yan Zhao, Richard Al Hadi, Mehmet Kaynak, Mau Chung Frank Chang, Jae Sung Rieh

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

This letter presents a mm-wave wideband amplifier implemented in a 130-nm SiGe BiCMOS technology operating up to 100 GHz. For the wideband operation, a new wideband technique based on low-impedance coupled line structure was proposed and adopted to the amplifier in combination with other bandwidth extension techniques. The enhancement of the amplifier bandwidth with the low-impedance coupled lines employed at the input and output matching networks is introduced in detail along with methodologies for actual implementation. The fabricated amplifier showed a peak gain of 13.2 dB with a 3-dB bandwidth of 90 GHz, covering from 10 to 100 GHz. The power consumption of the amplifier is 117 mW. The chip size is 865 × 344 µm² excluding probing pads.

Original language	English
Pages (from-to)	1313-1316
Number of pages	4
Journal	IEEE Microwave and Wireless Technology Letters
Volume	33
Issue number	9
DOIs	https://doi.org/10.1109/LMWT.2023.3288114
Publication status	Published - 2023 Sept 1

Bibliographical note

Publisher Copyright:
© 2023 IEEE.

Keywords

Broadband amplifiers
coupled mode analysis
silicon germanium
wideband

ASJC Scopus subject areas

Electrical and Electronic Engineering
Condensed Matter Physics

Access to Document

10.1109/LMWT.2023.3288114

Cite this

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title = "A 10–100-GHz Wideband Amplifier With Low-Impedance Coupled Lines in SiGe BiCMOS",

abstract = "This letter presents a mm-wave wideband amplifier implemented in a 130-nm SiGe BiCMOS technology operating up to 100 GHz. For the wideband operation, a new wideband technique based on low-impedance coupled line structure was proposed and adopted to the amplifier in combination with other bandwidth extension techniques. The enhancement of the amplifier bandwidth with the low-impedance coupled lines employed at the input and output matching networks is introduced in detail along with methodologies for actual implementation. The fabricated amplifier showed a peak gain of 13.2 dB with a 3-dB bandwidth of 90 GHz, covering from 10 to 100 GHz. The power consumption of the amplifier is 117 mW. The chip size is 865 × 344 µm2 excluding probing pads.",

keywords = "Broadband amplifiers, coupled mode analysis, silicon germanium, wideband",

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AU - Lee, Jaeman

AU - Zhao, Yan

AU - Al Hadi, Richard

AU - Kaynak, Mehmet

AU - Chang, Mau Chung Frank

AU - Rieh, Jae Sung

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AB - This letter presents a mm-wave wideband amplifier implemented in a 130-nm SiGe BiCMOS technology operating up to 100 GHz. For the wideband operation, a new wideband technique based on low-impedance coupled line structure was proposed and adopted to the amplifier in combination with other bandwidth extension techniques. The enhancement of the amplifier bandwidth with the low-impedance coupled lines employed at the input and output matching networks is introduced in detail along with methodologies for actual implementation. The fabricated amplifier showed a peak gain of 13.2 dB with a 3-dB bandwidth of 90 GHz, covering from 10 to 100 GHz. The power consumption of the amplifier is 117 mW. The chip size is 865 × 344 µm2 excluding probing pads.

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A 10–100-GHz Wideband Amplifier With Low-Impedance Coupled Lines in SiGe BiCMOS

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

Access to Document

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