A 10–100-GHz Wideband Amplifier With Low-Impedance Coupled Lines in SiGe BiCMOS

Doyoon Kim, Heekang Son, Jungsoo Kim, Jaeman Lee, Yan Zhao, Richard Al Hadi, Mehmet Kaynak, Mau Chung Frank Chang, Jae Sung Rieh

Research output: Contribution to journalArticlepeer-review


This letter presents a mm-wave wideband amplifier implemented in a 130-nm SiGe BiCMOS technology operating up to 100 GHz. For the wideband operation, a new wideband technique based on low-impedance coupled line structure was proposed and adopted to the amplifier in combination with other bandwidth extension techniques. The enhancement of the amplifier bandwidth with the low-impedance coupled lines employed at the input and output matching networks is introduced in detail along with methodologies for actual implementation. The fabricated amplifier showed a peak gain of 13.2 dB with a 3-dB bandwidth of 90 GHz, covering from 10 to 100 GHz. The power consumption of the amplifier is 117 mW. The chip size is 865 × 344 µm2 excluding probing pads.

Original languageEnglish
Pages (from-to)1313-1316
Number of pages4
JournalIEEE Microwave and Wireless Technology Letters
Issue number9
Publication statusPublished - 2023 Sept 1

Bibliographical note

Publisher Copyright:
© 2023 IEEE.


  • Broadband amplifiers
  • coupled mode analysis
  • silicon germanium
  • wideband

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics


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