TY - GEN
T1 - A 12-channel CMOS preamplifier-shaper-discriminator ASIC for APD and gas counters
AU - Yeom, J. Y.
AU - Defendi, I.
AU - Takahashi, H.
AU - Zeitelhack, K.
AU - Nakazawa, M.
AU - Murayama, H.
PY - 2005
Y1 - 2005
N2 - A 12-Channel (Ch) CMOS preamplifier-shaper-discriminator ASIC designed for avalanche photodiode (APD) and gas counter readout has been fabricated on a 2.4 mm × 2.4 mm die area using ROHM 0.35 μ CMOS technology. This mixed signal ASIC consists of both analog and digital devices and a window type discriminator is easily implemented through the use of a digital encoder to encode outputs from two comparators. The charge sensitive preamplifier which is based on gain-boosted (regulated) cascode topology has been tested to have a low optimum Equivalent Noise Charge (ENC) of about 900 e- + 75 e - /pF FWHM at a shaping time of 0.5 μs and the gain (voltage output to charge input) is 0.9/pF. The gain of the shaper is about 2.5/pF and the shaping time can be varied slightly from an external pin. This chip is capable of sensing bipolar signals and is linear at least up to 320 fC for negative charge and 150 fC for positive charge. The average ENC of each channel has been calculated to be about 1600 e- + 80 e-/pF FWHM. Finally, the power consumption of the chip was approximately 0.13 W.
AB - A 12-Channel (Ch) CMOS preamplifier-shaper-discriminator ASIC designed for avalanche photodiode (APD) and gas counter readout has been fabricated on a 2.4 mm × 2.4 mm die area using ROHM 0.35 μ CMOS technology. This mixed signal ASIC consists of both analog and digital devices and a window type discriminator is easily implemented through the use of a digital encoder to encode outputs from two comparators. The charge sensitive preamplifier which is based on gain-boosted (regulated) cascode topology has been tested to have a low optimum Equivalent Noise Charge (ENC) of about 900 e- + 75 e - /pF FWHM at a shaping time of 0.5 μs and the gain (voltage output to charge input) is 0.9/pF. The gain of the shaper is about 2.5/pF and the shaping time can be varied slightly from an external pin. This chip is capable of sensing bipolar signals and is linear at least up to 320 fC for negative charge and 150 fC for positive charge. The average ENC of each channel has been calculated to be about 1600 e- + 80 e-/pF FWHM. Finally, the power consumption of the chip was approximately 0.13 W.
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U2 - 10.1109/NSSMIC.2005.1596277
DO - 10.1109/NSSMIC.2005.1596277
M3 - Conference contribution
AN - SCOPUS:33846603117
SN - 0780392213
SN - 9780780392212
T3 - IEEE Nuclear Science Symposium Conference Record
SP - 391
EP - 393
BT - 2005 IEEE Nuclear Science Symposium Conference Record -Nuclear Science Symposium and Medical Imaging Conference
T2 - Nuclear Science Symposium Conference Record, 2005 IEEE
Y2 - 23 October 2005 through 29 October 2005
ER -