A 130-GHz OOK transmitter in 65-nm CMOS technology

Namhyung Kim; Heekang Son; Dong Hyun Kim; Jae Sung Rieh

doi:10.1109/SIRF.2016.7445484

A 130-GHz OOK transmitter in 65-nm CMOS technology

Namhyung Kim^*
, Heekang Son
, Dong Hyun Kim
, Jae Sung Rieh

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

A 130-GHz OOK transmitter has been developed based on a 65-nm CMOS technology in this work. The transmitter is composed of a 130-GHz fundamental oscillator and a switch-based OOK modulator. The oscillator is based on an LC cross-coupled differential pair with a tapered buffer, while the switch adopts a 3-stage shunt configuration. The on/off power ratio of the switch is over 20 dB, and the transmitter exhibits an output power of -5.1 dBm with the switch turned on. The 3-dB bandwidth of the transmitter measured with a frequency domain technique is 16 GHz. The transmitter consumes 55.2 mW, mostly arising from the oscillator.

Original language	English
Title of host publication	SiRF 2016 - 2016 IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	113-115
Number of pages	3
ISBN (Electronic)	9781509016877
DOIs	https://doi.org/10.1109/SIRF.2016.7445484
Publication status	Published - 2016 Mar 31
Event	16th IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2016 - Austin, United States Duration: 2016 Jan 24 → 2016 Jan 27

Publication series

Name	SiRF 2016 - 2016 IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

Other

Other	16th IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2016
Country/Territory	United States
City	Austin
Period	16/1/24 → 16/1/27

Bibliographical note

Publisher Copyright:
© 2016 IEEE.

Keywords

Transmitters
oscillators
switches

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Computer Networks and Communications

Access to Document

10.1109/SIRF.2016.7445484

Cite this

Kim, N., Son, H., Kim, D. H., & Rieh, J. S. (2016). A 130-GHz OOK transmitter in 65-nm CMOS technology. In SiRF 2016 - 2016 IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (pp. 113-115). Article 7445484 (SiRF 2016 - 2016 IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SIRF.2016.7445484

A 130-GHz OOK transmitter in 65-nm CMOS technology. / Kim, Namhyung; Son, Heekang; Kim, Dong Hyun et al.
SiRF 2016 - 2016 IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems. Institute of Electrical and Electronics Engineers Inc., 2016. p. 113-115 7445484 (SiRF 2016 - 2016 IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kim, N, Son, H, Kim, DH & Rieh, JS 2016, A 130-GHz OOK transmitter in 65-nm CMOS technology. in SiRF 2016 - 2016 IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems., 7445484, SiRF 2016 - 2016 IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, Institute of Electrical and Electronics Engineers Inc., pp. 113-115, 16th IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2016, Austin, United States, 16/1/24. https://doi.org/10.1109/SIRF.2016.7445484

Kim N, Son H, Kim DH, Rieh JS. A 130-GHz OOK transmitter in 65-nm CMOS technology. In SiRF 2016 - 2016 IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems. Institute of Electrical and Electronics Engineers Inc. 2016. p. 113-115. 7445484. (SiRF 2016 - 2016 IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems). doi: 10.1109/SIRF.2016.7445484

Kim, Namhyung ; Son, Heekang ; Kim, Dong Hyun et al. / A 130-GHz OOK transmitter in 65-nm CMOS technology. SiRF 2016 - 2016 IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 113-115 (SiRF 2016 - 2016 IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems).

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abstract = "A 130-GHz OOK transmitter has been developed based on a 65-nm CMOS technology in this work. The transmitter is composed of a 130-GHz fundamental oscillator and a switch-based OOK modulator. The oscillator is based on an LC cross-coupled differential pair with a tapered buffer, while the switch adopts a 3-stage shunt configuration. The on/off power ratio of the switch is over 20 dB, and the transmitter exhibits an output power of -5.1 dBm with the switch turned on. The 3-dB bandwidth of the transmitter measured with a frequency domain technique is 16 GHz. The transmitter consumes 55.2 mW, mostly arising from the oscillator.",

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N2 - A 130-GHz OOK transmitter has been developed based on a 65-nm CMOS technology in this work. The transmitter is composed of a 130-GHz fundamental oscillator and a switch-based OOK modulator. The oscillator is based on an LC cross-coupled differential pair with a tapered buffer, while the switch adopts a 3-stage shunt configuration. The on/off power ratio of the switch is over 20 dB, and the transmitter exhibits an output power of -5.1 dBm with the switch turned on. The 3-dB bandwidth of the transmitter measured with a frequency domain technique is 16 GHz. The transmitter consumes 55.2 mW, mostly arising from the oscillator.

AB - A 130-GHz OOK transmitter has been developed based on a 65-nm CMOS technology in this work. The transmitter is composed of a 130-GHz fundamental oscillator and a switch-based OOK modulator. The oscillator is based on an LC cross-coupled differential pair with a tapered buffer, while the switch adopts a 3-stage shunt configuration. The on/off power ratio of the switch is over 20 dB, and the transmitter exhibits an output power of -5.1 dBm with the switch turned on. The 3-dB bandwidth of the transmitter measured with a frequency domain technique is 16 GHz. The transmitter consumes 55.2 mW, mostly arising from the oscillator.

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A 130-GHz OOK transmitter in 65-nm CMOS technology

Abstract

Publication series

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Bibliographical note

Keywords

ASJC Scopus subject areas

Access to Document

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