A 135 GHz differential active star mixer in SiGe BiCMOS technology

Dong Hyun Kim, Jae Sung Rieh

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)


A 135 GHz G m -boosted down-conversion active mixer adopting dual baluns has been developed in this work. Fabricated with a 0.18-μ m SiGe BiCMOS technology, the mixer exhibits a differential-mode conversion gain of 11.5 dB at RF frequency of 134.7 GHz for a fixed LO frequency and power of 134 GHz and 10 dBm, respectively. The mixer also shows a P - dB of -20 dBm and LO-RF isolation of 31 dB. The entire circuit draws 1.3 mA from a 3 V supply. The fabricated mixer occupies 0.23 × 0.54 mm 2 of chip area excluding pad region.

Original languageEnglish
Article number6236232
Pages (from-to)409-411
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Issue number8
Publication statusPublished - 2012

Bibliographical note

Funding Information:
Manuscript received February 02, 2012; revised May 12, 2012 and June 14, 2012; accepted June 19, 2012. Date of publication July 10, 2012; date of current version August 03, 2012. This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST) (2012R1A2A1A01005584).


  • Gain
  • millimeter-wave circuits
  • mixers

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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