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A 1.6 v 1.4 Gbp/s/pin consumer DRAM with self-dynamic voltage scaling technique in 44 nm CMOS technology
Hyun Woo Lee
*
, Ki Han Kim
, Young Kyoung Choi
, Ju Hwan Sohn
, Nak Kyu Park
, Kwan Weon Kim
,
Chulwoo Kim
, Young Jung Choi
, Byong Tae Chung
*
Corresponding author for this work
Research output
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Article
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peer-review
15
Citations (Scopus)
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Keyphrases
Dynamic Voltage Scaling
100%
CMOS Technology
100%
Scaling Technique
100%
Supply Voltage
75%
Design Techniques
50%
Adaptive Clock
50%
DDR2 SDRAM
50%
Adaptive Design
50%
Clock Gating
50%
High Performance
25%
Delay-locked Loop
25%
Scaling Method
25%
Operating Frequency
25%
Circuitry
25%
Performance Requirements
25%
Power Supply
25%
Process Technology
25%
Process Variation
25%
Design Margin
25%
Dynamic Power Consumption
25%
Data Window
25%
Scaling Design
25%
Valid Data
25%
Adaptive Bandwidth
25%
Timing Margin
25%
Die Area
25%
Clock Distribution Network
25%
Operating Process
25%
Engineering
Process Variation
25%