A 1.6 v 1.4 Gbp/s/pin consumer DRAM with self-dynamic voltage scaling technique in 44 nm CMOS technology
- Hyun Woo Lee*
- , Ki Han Kim
- , Young Kyoung Choi
- , Ju Hwan Sohn
- , Nak Kyu Park
- , Kwan Weon Kim
- , Chulwoo Kim
- , Young Jung Choi
- , Byong Tae Chung
*Corresponding author for this work
Research output: Contribution to journal › Article › peer-review
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