@inproceedings{b338f6685f0f40d2b9899313a21d8991,
title = "A 1.8V wide-band LNA design in 0.18-μm triple-well CMOS",
abstract = "In this paper, comparison between cascode type CMOS low noise amplifiers (LNAs) at different body connection in triple-well structure are presented. By employing a body to source direct connection, the LNA circuit can be designed more compact while maintaining an enhanced gain and bandwidth due to suppression of variation in the threshold voltage. LNAs for DVB-S2 have been designed and fabricated using 0.18-μm triple-well CMOS technology.",
keywords = "CMOS, Deep N-well, LNA, Triple-well",
author = "Hyeonseok Hwang and Jeong, {Chan Hui} and Chankeun Kwon and Hoonki Kim and Youngmok Jeong and Bumsoo Lee and Kim, {Soo Won}",
year = "2012",
doi = "10.1109/EDSSC.2012.6482831",
language = "English",
isbn = "9781467356961",
series = "2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012",
booktitle = "2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012",
note = "2012 8th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2012 ; Conference date: 03-12-2012 Through 05-12-2012",
}