A 200 GHz heterodyne image receiver with an integrated VCO in a SiGe BiCMOS technology

Daekeun Yoon, Jae Sung Rieh

    Research output: Contribution to journalArticlepeer-review

    6 Citations (Scopus)

    Abstract

    A 200 GHz heterodyne image receiver consisting of a mixer integrated with an on-chip voltage controlled oscillator (VCO) has been developed in a 0.18 μm SiGe BiCMOS technology. Incoming signals near 200 GHz are down-converted by the 3rd-order subharmonic mixer with V-band local oscillator (LO) pumping, which is provided by the Colpitts VCO with a stacked common-base buffer. The measured minimum conversion loss is 11.5 dB at 196 GHz with an input 1 db compression point (P-1 dB) of -13 dBm. The fabricated chip with an area of 600 × 400 μm2 including pads consumes total DC power of 25.5 mW. A two-dimensional 200 GHz image acquired with the receiver is presented to demonstrate its imaging application.

    Original languageEnglish
    Article number6842678
    Pages (from-to)557-559
    Number of pages3
    JournalIEEE Microwave and Wireless Components Letters
    Volume24
    Issue number8
    DOIs
    Publication statusPublished - 2014 Aug

    Keywords

    • Bipolar integrated circuit
    • heterojunction bipolar transistors
    • imaging
    • receivers

    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Electrical and Electronic Engineering

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