A 200 GHz heterodyne image receiver with an integrated VCO in a SiGe BiCMOS technology

Daekeun Yoon; Jae Sung Rieh

doi:10.1109/LMWC.2014.2324177

A 200 GHz heterodyne image receiver with an integrated VCO in a SiGe BiCMOS technology

Daekeun Yoon, Jae Sung Rieh

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

A 200 GHz heterodyne image receiver consisting of a mixer integrated with an on-chip voltage controlled oscillator (VCO) has been developed in a 0.18 μm SiGe BiCMOS technology. Incoming signals near 200 GHz are down-converted by the 3rd-order subharmonic mixer with V-band local oscillator (LO) pumping, which is provided by the Colpitts VCO with a stacked common-base buffer. The measured minimum conversion loss is 11.5 dB at 196 GHz with an input 1 db compression point (P_{-1 dB}) of -13 dBm. The fabricated chip with an area of 600 × 400 μm² including pads consumes total DC power of 25.5 mW. A two-dimensional 200 GHz image acquired with the receiver is presented to demonstrate its imaging application.

Original language	English
Article number	6842678
Pages (from-to)	557-559
Number of pages	3
Journal	IEEE Microwave and Wireless Components Letters
Volume	24
Issue number	8
DOIs	https://doi.org/10.1109/LMWC.2014.2324177
Publication status	Published - 2014 Aug

Keywords

Bipolar integrated circuit
heterojunction bipolar transistors
imaging
receivers

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/LMWC.2014.2324177

Cite this

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abstract = "A 200 GHz heterodyne image receiver consisting of a mixer integrated with an on-chip voltage controlled oscillator (VCO) has been developed in a 0.18 μm SiGe BiCMOS technology. Incoming signals near 200 GHz are down-converted by the 3rd-order subharmonic mixer with V-band local oscillator (LO) pumping, which is provided by the Colpitts VCO with a stacked common-base buffer. The measured minimum conversion loss is 11.5 dB at 196 GHz with an input 1 db compression point (P-1 dB) of -13 dBm. The fabricated chip with an area of 600 × 400 μm2 including pads consumes total DC power of 25.5 mW. A two-dimensional 200 GHz image acquired with the receiver is presented to demonstrate its imaging application.",

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author = "Daekeun Yoon and Rieh, {Jae Sung}",

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AU - Rieh, Jae Sung

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AB - A 200 GHz heterodyne image receiver consisting of a mixer integrated with an on-chip voltage controlled oscillator (VCO) has been developed in a 0.18 μm SiGe BiCMOS technology. Incoming signals near 200 GHz are down-converted by the 3rd-order subharmonic mixer with V-band local oscillator (LO) pumping, which is provided by the Colpitts VCO with a stacked common-base buffer. The measured minimum conversion loss is 11.5 dB at 196 GHz with an input 1 db compression point (P-1 dB) of -13 dBm. The fabricated chip with an area of 600 × 400 μm2 including pads consumes total DC power of 25.5 mW. A two-dimensional 200 GHz image acquired with the receiver is presented to demonstrate its imaging application.

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A 200 GHz heterodyne image receiver with an integrated VCO in a SiGe BiCMOS technology

Abstract

Keywords

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